Indian Journal of Science and Technology

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Design and Analysis of High Gain, Low Power and Low Voltage a-Si TFT based Operational Amplifier


Affiliations
1 Faculty of Electronics and Communication, Sathyabama University, Chennai-600119, Tamil Nadu, India
2 Jeppiaar Institute of Technology, Sriperumbudur, Kanchipuram District, Kunnam-631604, Tamil Nadu, India
 

This paper investigates on the design of two stage Operational Amplifier (Op-Amp) with NMOS input at differential stage. This low power Op-Amp designed with Amorphous Silicon Thin Film Transistor (a-Si TFT) and MOS transistor. It is observed that the newly designed TFT Op-AMP operates in low voltage at 3V DC, with high gain, high output impedance and high phase margin and moderate power dissipation. A detailed design procedure is carried-out to design the proposed Op-Amp. HSPICE Circuit Simulator is used for simulation. Obtained results are compared with CMOS Op-Amp which uses the same circuit and design procedure. The output behavior of TFT Op-Amp is also compared with the existing work showing good agreement.

Keywords

Amorphous Silicon, CMOS, High Stability, Low Power, Operational Amplifier, Thin Film Transistor
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  • Design and Analysis of High Gain, Low Power and Low Voltage a-Si TFT based Operational Amplifier

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Authors

G. Prabhakaran
Faculty of Electronics and Communication, Sathyabama University, Chennai-600119, Tamil Nadu, India
V. Kannan
Jeppiaar Institute of Technology, Sriperumbudur, Kanchipuram District, Kunnam-631604, Tamil Nadu, India

Abstract


This paper investigates on the design of two stage Operational Amplifier (Op-Amp) with NMOS input at differential stage. This low power Op-Amp designed with Amorphous Silicon Thin Film Transistor (a-Si TFT) and MOS transistor. It is observed that the newly designed TFT Op-AMP operates in low voltage at 3V DC, with high gain, high output impedance and high phase margin and moderate power dissipation. A detailed design procedure is carried-out to design the proposed Op-Amp. HSPICE Circuit Simulator is used for simulation. Obtained results are compared with CMOS Op-Amp which uses the same circuit and design procedure. The output behavior of TFT Op-Amp is also compared with the existing work showing good agreement.

Keywords


Amorphous Silicon, CMOS, High Stability, Low Power, Operational Amplifier, Thin Film Transistor



DOI: https://doi.org/10.17485/ijst%2F2015%2Fv8i16%2F75344