Indian Journal of Science and Technology

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Modeling of a 6H-SiC MESFET for High-power and High-gain Applications


Affiliations
1 Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran, Islamic Republic of
 

A Monte Carlo simulation has been used to model steady state and transient electron transport in 6H-SiC field effect transistor. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible and the predicted I-V and transfer characteristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derived the frequency bandwidth. Value of 90±10 GHz has been derived for the intrinsic current gain cut-off frequency of the 6H-SiC MESFETs.

Keywords

Steady-state, Transient, Cut-off Frequency, Frequency Bandwidth
User

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  • Modeling of a 6H-SiC MESFET for High-power and High-gain Applications

Abstract Views: 373  |  PDF Views: 91

Authors

H. Arabshahi
Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran, Islamic Republic of
M. Rezaee Rokn-Abadi
Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran, Islamic Republic of

Abstract


A Monte Carlo simulation has been used to model steady state and transient electron transport in 6H-SiC field effect transistor. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible and the predicted I-V and transfer characteristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derived the frequency bandwidth. Value of 90±10 GHz has been derived for the intrinsic current gain cut-off frequency of the 6H-SiC MESFETs.

Keywords


Steady-state, Transient, Cut-off Frequency, Frequency Bandwidth

References





DOI: https://doi.org/10.17485/ijst%2F2011%2Fv4i1%2F29920