Indian Journal of Science and Technology

Open Access Open Access  Restricted Access Subscription Access

Design of Multi-Segment Hybrid Type Content Addressable Memory in High Performance FinFET Technology


Affiliations
1 School of Electronics Engineering, VIT University, Vellore - 632014, Tamil Nadu, India
 

Power dissipation due to memories has become a major concern of modern digital design. Scaling of CMOS technology has lead to short channel effects. Here CAM cells are designed using FinFET which have better gate control over drain to source current. The CAM cells designed with 30nm LG are used in multi-segment hybrid CAM architecture. The results are compared with the original hybrid CAM. It is observed that the energy metric of proposed architecture is 7% less compared to hybrid CAM.

Keywords

Content-Addressable Memory (CAM), FinFET, Hybrid-Type CAM.
User

Abstract Views: 157

PDF Views: 0




  • Design of Multi-Segment Hybrid Type Content Addressable Memory in High Performance FinFET Technology

Abstract Views: 157  |  PDF Views: 0

Authors

V. Mohammed Zackriya
School of Electronics Engineering, VIT University, Vellore - 632014, Tamil Nadu, India
Anurag Verma
School of Electronics Engineering, VIT University, Vellore - 632014, Tamil Nadu, India
Harish M. Kittur
School of Electronics Engineering, VIT University, Vellore - 632014, Tamil Nadu, India

Abstract


Power dissipation due to memories has become a major concern of modern digital design. Scaling of CMOS technology has lead to short channel effects. Here CAM cells are designed using FinFET which have better gate control over drain to source current. The CAM cells designed with 30nm LG are used in multi-segment hybrid CAM architecture. The results are compared with the original hybrid CAM. It is observed that the energy metric of proposed architecture is 7% less compared to hybrid CAM.

Keywords


Content-Addressable Memory (CAM), FinFET, Hybrid-Type CAM.



DOI: https://doi.org/10.17485/ijst%2F2015%2Fv8i24%2F141599