Theoretical Research of Laser-Controlled Thermocleavage of Sapphire Wafers

Objectives: We present the theoretical research of laser-managed thermocleavage of sapphire wafers using numerical modeling techniques, such as finite element method. Methods/Statistical Analysis: The model of laser treatment of sapphire wafers allows analyzing the distribution of temperature and thermal stresses in a heated sample. Simulation of sapphire wafers laser treatment was performed with the help of heat equation solution in ANSYS finite element analysis software. Findings: Temperature distribution and thermal stresses in sapphire wafers by irradiating Nd: YAG laser with a wavelength of 1.064 μm were obtained. It was found that the laser power density and the speed of the laser beam significantly affect sapphire cutting quality. The simulation revealed that the maximum temperature on the surface of the sapphire wafer is about 500-830°C at the average laser power of 80-100 W and a speed of movement of the laser beam 1-5 mm/s. Application/Improvements: The laser thermocleavage method for sapphire wafers can be used in construction of new devices in micro- and optoelectronics as well as in electronics industry.