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Structural Studies of ZnO: Al Thin Film Synthesized by Low Cost Spray Pyrolysis for Optoelectronic Applications


Affiliations
1 Department of Physics, Sathyabama University, Chennai – 600 119, Tamil Nadu, India
2 Department of Physics, University of Madras, Chennai - 600 005, Tamil Nadu, India
     

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Undoped and Aluminum-doped ZnO thin films are prepared by ultrasonic spray pyrolysis at 400 °C on glass substrates were investigated. The dopant solution is taken at the atomic percentage of 1 to 5. By using X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM), the crystallographic properties and surface morphology of the films were characterized. The X-ray diffraction results show that the pure ZnO thin films have polycrystalline nature and possess a typical hexagonal wurtzite structure. Compared to pure ZnO thin film, the grain size in the Al-doped thin film is increased. They are well crystallized and the grain size is (e = 0.13 μm) for Al-doped ZnO and (e = 0.1 μm) for undoped ZnO. Compared to the previous reports, grain size of the ZnO thin film also increases with the increasing annealing temperature.

Keywords

Optoelectronic Devices, Spray Pyrolysis, Thin Film.
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  • D. Bao, H. Gu, and A. Kunag, Thin Solid Films, 312, 37 (1998).
  • G. Srinivasan, N. Gopalakrishnan, Y. S. Yu, R. Kesavamoorthy, and J. Kumar, Superlattices and Microstructures, 43, 112 (2008).
  • C. J. Brinker, G. C. Frye, A. J. Hurd, and C. S. Ashley, Thin Solid Films, 201, 97 (1991).
  • S. Eisermann, J. Sann, A. Polity, and B. K. Meyer, Thin Solid Films, 517, 5805 (2009).
  • M. Rusop, K. Uma, T. Soga, and T. Jimbo, Mater. Sci. Eng. B, 127, 150 (2006).
  • A. L. Mercado, C. E. Allmond, J. G. Hoekstra, and J. M. FitzGerald, Appl. Phys. A, 81, 591 (2005).
  • D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett., 81, 1830 (2002).
  • C. Rameshkumar, R. Subalakshmi, J. Chem. Pharmaceut. Res., 7, 459 (2015).
  • D. Perednis and L. J. Gauckler, J. Electrocer., 14, 103 (2005).
  • M. Krunks and E. Mellikov, Thin Solid Films, 270, 33 (1995).
  • O. Vigil, F. Cruz, A . Morales-Acevedo, G. Contreras-Puente, L. Vaillant, and G. Santana, Mater. Chem. Phys., 68, 249 (2001).
  • J. Jungyol, S. Ogweon, C. Hyoshik, L. Byeonggon, Appl. Phys. Express, 1, 041202 (2008).
  • C. Rameshkumar, R. Subalakshmi, Int. J. Chem. Tech. Res., 7, 2532 (2015).

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  • Structural Studies of ZnO: Al Thin Film Synthesized by Low Cost Spray Pyrolysis for Optoelectronic Applications

Abstract Views: 204  |  PDF Views: 2

Authors

C. Rameshkumar
Department of Physics, Sathyabama University, Chennai – 600 119, Tamil Nadu, India
R. Subalakshmi
Department of Physics, University of Madras, Chennai - 600 005, Tamil Nadu, India

Abstract


Undoped and Aluminum-doped ZnO thin films are prepared by ultrasonic spray pyrolysis at 400 °C on glass substrates were investigated. The dopant solution is taken at the atomic percentage of 1 to 5. By using X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM), the crystallographic properties and surface morphology of the films were characterized. The X-ray diffraction results show that the pure ZnO thin films have polycrystalline nature and possess a typical hexagonal wurtzite structure. Compared to pure ZnO thin film, the grain size in the Al-doped thin film is increased. They are well crystallized and the grain size is (e = 0.13 μm) for Al-doped ZnO and (e = 0.1 μm) for undoped ZnO. Compared to the previous reports, grain size of the ZnO thin film also increases with the increasing annealing temperature.

Keywords


Optoelectronic Devices, Spray Pyrolysis, Thin Film.

References