Open Access Open Access  Restricted Access Subscription Access

Silicon Nano Thin Film Deposition Using Hot Wire CVD & its Structural-Optical Characterization


Affiliations
1 Electrical Engineering Department, Sardar Vallabhbhai National Institute of Technology, Surat-395007, Gujarat, India
2 Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat-395007, Gujarat, India
 

A study on silicon multilayer structure having alternate hydrogenated nanocrystalline silicon layer and hydrogenated amorphous silicon, prepared by hot wire chemical vapour deposition is given. The structural characterization of film is done by raman spectroscopy. The peak at 516.3 cm–1 shows the characteristic crystalline peak together with broad amorphous peak at 481 cm–1. The optical band gap of thin film is 1.78 eV and thus shows that the film consist of mixed phase components.

Keywords

Multilayer, Raman Spectroscopy, HWCVD, Optical Bandgap.
User
Notifications
Font Size

Abstract Views: 136

PDF Views: 0




  • Silicon Nano Thin Film Deposition Using Hot Wire CVD & its Structural-Optical Characterization

Abstract Views: 136  |  PDF Views: 0

Authors

Ashok Kherodia
Electrical Engineering Department, Sardar Vallabhbhai National Institute of Technology, Surat-395007, Gujarat, India
Sanjay Kumar J. Patel
Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat-395007, Gujarat, India
Vipul Kheraj
Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat-395007, Gujarat, India
Ashish K. Panchal
Electrical Engineering Department, Sardar Vallabhbhai National Institute of Technology, Surat-395007, Gujarat, India

Abstract


A study on silicon multilayer structure having alternate hydrogenated nanocrystalline silicon layer and hydrogenated amorphous silicon, prepared by hot wire chemical vapour deposition is given. The structural characterization of film is done by raman spectroscopy. The peak at 516.3 cm–1 shows the characteristic crystalline peak together with broad amorphous peak at 481 cm–1. The optical band gap of thin film is 1.78 eV and thus shows that the film consist of mixed phase components.

Keywords


Multilayer, Raman Spectroscopy, HWCVD, Optical Bandgap.