Mody University International Journal of Computing and Engineering Research

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Design of Efficient Ring VCO using Nano Scale Double Gate MOSFET


Affiliations
1 Department of Electronics and Communication Engineering, Mody University of Science and Technology, Lakshmangarh, Rajasthan, India
 

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In this paper a voltage controlled oscillator (VCO) using MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and Double Gate (DG) MOSFET are compared and analyzed. The comparison has been done on the basis of different parameters: voltage swing, tuning range, power consumption, number of stages and phase noise. Two architectures namely current starved ring VCO and inverter based oscillator are implemented using DG MOSFET. The results of simulation indicated that implementation using DG MOSFET, gives very high tuning range as compared to MOSFET based VCO. The Tuning range in current starved VCO using DG MOSFET is found out to be 16 GHz to 22 GHz compared to MOSFET which is only 3 GHz to 5 GHz. The phase noise performance of DG MOSFET based VCO is also better than MOSFET based VCO for low frequency domain.

Keywords

CMOS Technology, Ring Oscillator, Current Starved Ring VCO, Voltage Controlled Oscillator, Phase Noise, Double Gate MOSFET.
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  • Shruti Suman, K. G. Sharma and P. K. Ghosh, “Design of PLL Using Improved Performance Ring VCO” - in International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT, held at D. M. I. College of Engineering, Chennai during 3-5 March 2016, ISBN: 978-1-4673-9939-5, pp.-3478-3483, DOI: 10.1109/ICEEOT.2016.7755351

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  • Shruti Suman, K. G. Sharma, P. K. Ghosh, Performance Analysis of Voltage Controlled Ring Oscillators, – in “International Congress on Information and Communication Technology (ICICT)”, Advances in Intelligent System., Computing (AISC), Vol. 439, Chapter 4, ISSN 978-981-10-0754-5, Udaipur, 9 – 10 October 2015, pp.-29-38.

  • Shruti Suman, Monika Bhardwaj, Prof. B. P. Singh “An Improved Performance Ring Oscillator Design,” International Conference on Advanced Computing & Communication Technologies, 7-8 January 2012 Rohtak, India, ISBN: 978-0-7695-4640-7, 2012, pp. 236-239.

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  • Vaishali, Shruti Suman, K. G. Sharma, P. K. Ghosh , “Design of Ring Oscillator based VCO with Improved Performance”-in Innovative Systems Design and Engineering, Vol.5, No.2, 2014, pp. 31-41, ISSN 2222-1727 (Paper), ISSN 2222-2871 (Online), DOI: 10.1109/ACCT.2015.127.

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  • Shruti Suman, K. G. Sharma and P. K. Ghosh, “Analysis and Design of Current Starved Ring VCO” - in International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT) , held at D. M. I. College of Engineering, Chennai during 3-5 March 2016, ISBN: 978-1-4673-9939-5,pp.-3222-3227, DOI: 10.1109/ICEEOT.2016.7755299.

  • Bhawika Kinger, Shruti Suman, , K. G. Sharma, P. K. Ghosh, “Design of Improved Performance Voltage Controlled Ring Oscillator” – in 5th IEEE International Conference on Advanced Computing & Communication Technologies, Rohtak, (India), during February 21-22, 2015, pp. 441-445. ISBN 978-1-4799-8487-9, DOI 10.1109/ACCT.2015.127

  • Bhavana Goyal, Shruti Suman, P. K. Ghosh , “Design and Analysis of Improved Ring VCO Based on Differential Pair Configuration” - in International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), held in D. M. I. College of Engineering, Chennai during 3 – 5 March 2016,ISBN: 978-1-4673-9939-5, DOI: 10.1109/ICEEOT.2016.7755348

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  • Design of Efficient Ring VCO using Nano Scale Double Gate MOSFET

Abstract Views: 151  |  PDF Views: 98

Authors

Shruti Suman
Department of Electronics and Communication Engineering, Mody University of Science and Technology, Lakshmangarh, Rajasthan, India

Abstract


In this paper a voltage controlled oscillator (VCO) using MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and Double Gate (DG) MOSFET are compared and analyzed. The comparison has been done on the basis of different parameters: voltage swing, tuning range, power consumption, number of stages and phase noise. Two architectures namely current starved ring VCO and inverter based oscillator are implemented using DG MOSFET. The results of simulation indicated that implementation using DG MOSFET, gives very high tuning range as compared to MOSFET based VCO. The Tuning range in current starved VCO using DG MOSFET is found out to be 16 GHz to 22 GHz compared to MOSFET which is only 3 GHz to 5 GHz. The phase noise performance of DG MOSFET based VCO is also better than MOSFET based VCO for low frequency domain.

Keywords


CMOS Technology, Ring Oscillator, Current Starved Ring VCO, Voltage Controlled Oscillator, Phase Noise, Double Gate MOSFET.

References