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Insights into Structural, Electronic and Thermoelectric Properties of ZnTMN2 (TM= Zr and Hf): A First-Principles Study


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1 Department of Applied Physics, Delhi Technological University (DTU), Delhi 110 042, India
 

We employ first-principles calculations combined with semi classical Boltzmann transport theory to investigate the structural, electronic, and thermoelectric properties of ZnTMN2 (TM= Zr and Hf). The negative value of formation energy confirms the stability of these compounds. We used Tran Blaha modified Becke Johnson approximation to calculate electronic properties. ZnZrN2 and ZnHfN2 are having indirect bands of magnitude 2.77 eV and 3.31 eV, respectively. The positive value of the Seebeck Coefficient at all studied temperatures confirms its p-type nature. The thermal conductivity slightly decreases with a rise in temperature in ZnHfN2 as compared to ZnZrN2. The observed value of the figure of merit is 0.80 and 0.81 at 500 K and 600 K for ZnZrN2 and ZnHfN2, respectively. The high figure of merit of Hf and Zr-based nitrides make them a potential material for thermoelectric energy harvesting applications.

Keywords

DFT; Becke johnson approximation; Electronic properties; Seebeck coefficient; Thermoelectric energy harvesting.
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  • Snyder G, Toberer E, Nature Mater, 7 (2008) 105.
  • Sanad M F, Shalan A E, Abdellatif S O et al., Top Curr Chem (Z), 378 (2020) 48.
  • Kumar R, Kumar R, Vij A & Singh M, Phys Scr, 97 (2022) 075813.
  • Sangeeta, Kumar R & Singh M, J Mater Sci, 57 (2022) 10691.
  • Eklund P, Kerdsongpanya S & Alling B, J Mater Chem C, 4 (2016) 3905.
  • Hultman L, Vaccum, 57 (2000) 1.
  • Berguzinov A, Kozlovskiy A, Kenzhina I & Shlimas D I, Nanomaterials, 12(2022) 1789.
  • Blaha P, Schwarz K, Madsen G K H, Kvasnicka D and Luitz J 2018 WIEN2k an augment plane wave+ local orbitals program for calculating crystal properties User's Guide, ISBN 3-9501031-1-2.
  • Perdew J P, Burke K & Ernzerhof M, Phy Rev Lett, 77 (1996) 3865.
  • Tran F & Blaha P, Phys Rev Lett, 102 (2009) 226401.
  • Madsen G K H & Singh D J Comput Phys Commun, 175(2006) 67.
  • Tholander C, Andersson C B A, Armiento R, Tasnádi F & Alling B, J Appl Phys, 120 (2016) 225102.

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  • Insights into Structural, Electronic and Thermoelectric Properties of ZnTMN2 (TM= Zr and Hf): A First-Principles Study

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Authors

Rajesh Kumar
Department of Applied Physics, Delhi Technological University (DTU), Delhi 110 042, India
Ramesh Kumar
Department of Applied Physics, Delhi Technological University (DTU), Delhi 110 042, India
Sangeeta
Department of Applied Physics, Delhi Technological University (DTU), Delhi 110 042, India
Kulwinder Kumar
Department of Applied Physics, Delhi Technological University (DTU), Delhi 110 042, India
Mukhtiyar Singh
Department of Applied Physics, Delhi Technological University (DTU), Delhi 110 042, India

Abstract


We employ first-principles calculations combined with semi classical Boltzmann transport theory to investigate the structural, electronic, and thermoelectric properties of ZnTMN2 (TM= Zr and Hf). The negative value of formation energy confirms the stability of these compounds. We used Tran Blaha modified Becke Johnson approximation to calculate electronic properties. ZnZrN2 and ZnHfN2 are having indirect bands of magnitude 2.77 eV and 3.31 eV, respectively. The positive value of the Seebeck Coefficient at all studied temperatures confirms its p-type nature. The thermal conductivity slightly decreases with a rise in temperature in ZnHfN2 as compared to ZnZrN2. The observed value of the figure of merit is 0.80 and 0.81 at 500 K and 600 K for ZnZrN2 and ZnHfN2, respectively. The high figure of merit of Hf and Zr-based nitrides make them a potential material for thermoelectric energy harvesting applications.

Keywords


DFT; Becke johnson approximation; Electronic properties; Seebeck coefficient; Thermoelectric energy harvesting.

References