Indian Journal of Pure and Applied Physics

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A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance


Affiliations
1 Department of Electronics, Vidyasagar University, Paschim Medinipur, West Bengal, India
2 Department of Physics, Vidyasagar University, Paschim Medinipur, West Bengal, India

This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and drain conductance of the device has been derived and their variation over different field regions has been investigated. This work has also been extended to study the RF parameters like cut-off frequency and maximum operating frequency of the device. The threshold voltage of the device is also derived and studied in terms of the thickness of the doped AlGaN layer and mole fraction of AlGaN. The mathematical model presented here is calibrated with the experimentally available results reported earlier and a good agreement has been observed.
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  • A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance

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Authors

Sutanu Dutta
Department of Electronics, Vidyasagar University, Paschim Medinipur, West Bengal, India
Prabir Kumar Shit
Department of Physics, Vidyasagar University, Paschim Medinipur, West Bengal, India
Radha Raman Pal
Department of Physics, Vidyasagar University, Paschim Medinipur, West Bengal, India

Abstract


This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and drain conductance of the device has been derived and their variation over different field regions has been investigated. This work has also been extended to study the RF parameters like cut-off frequency and maximum operating frequency of the device. The threshold voltage of the device is also derived and studied in terms of the thickness of the doped AlGaN layer and mole fraction of AlGaN. The mathematical model presented here is calibrated with the experimentally available results reported earlier and a good agreement has been observed.