Indian Journal of Pure and Applied Physics

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ZnO Nanoneedle Based Efficient UV-Photodetector


Affiliations
1 Indian Institute of Technology Bombay, Monash Research Academy, Mumbai 400 076, India
2 Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400 001, India
3 Centre for Research in Nanotechnology and Science, India Institute of Technology Bombay, Mumbai 400 076, India
4 Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
5 Department of Applied Physics, Defence Institute of Advanced Technology, Pune 411 025, India

This article reports the fabrication and characterization of nano-structured ITO/ZnO ultraviolet photodetector. A ZnO thin film was deposited by spray pyrolysis technique followed by interdigitated ITO as electrode deposition by RF sputter. Grazing angle x-ray diffraction (GIXRD) study indicates preferential growth along c-axis (002) of thin-film leading nanoneedle formation which was further confirmed by scanning electron microscopy (SEM) imaging. X-ray photoelectron spectroscopy (XPS) analysis of Oxygen 1s (O 1s) was carried out. A peak was observed at 531.8 eV indicating the presence of oxygen vacancy, 530 eV peak relates to the ZnO phase. The bandgap was determined by the Tauc plot; which was found to be 3.22eV. The donor carrier concentration is found to be 8.85x1018 cm-3 based on room temperature Hall measurement. A near ohmic behaviour was observed which can be interpreted by the existence of high carrier concentration in ZnO. This results in a very thin depletion width of the order of 5nm; therefore, charge transport through the junction is dominated by tunnelling of electrons through depletion width.
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  • ZnO Nanoneedle Based Efficient UV-Photodetector

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Authors

UZMA BANO MEMON
Indian Institute of Technology Bombay, Monash Research Academy, Mumbai 400 076, India
A Ibrahim
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400 001, India
S Roy
Centre for Research in Nanotechnology and Science, India Institute of Technology Bombay, Mumbai 400 076, India
S P Duttaguptta
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
S Kale
Department of Applied Physics, Defence Institute of Advanced Technology, Pune 411 025, India

Abstract


This article reports the fabrication and characterization of nano-structured ITO/ZnO ultraviolet photodetector. A ZnO thin film was deposited by spray pyrolysis technique followed by interdigitated ITO as electrode deposition by RF sputter. Grazing angle x-ray diffraction (GIXRD) study indicates preferential growth along c-axis (002) of thin-film leading nanoneedle formation which was further confirmed by scanning electron microscopy (SEM) imaging. X-ray photoelectron spectroscopy (XPS) analysis of Oxygen 1s (O 1s) was carried out. A peak was observed at 531.8 eV indicating the presence of oxygen vacancy, 530 eV peak relates to the ZnO phase. The bandgap was determined by the Tauc plot; which was found to be 3.22eV. The donor carrier concentration is found to be 8.85x1018 cm-3 based on room temperature Hall measurement. A near ohmic behaviour was observed which can be interpreted by the existence of high carrier concentration in ZnO. This results in a very thin depletion width of the order of 5nm; therefore, charge transport through the junction is dominated by tunnelling of electrons through depletion width.