Rahis Kumar Yadav ¹, Pankaj Pathak ¹, R. M. Mehra ¹

Affiliations
1 Department of Electronics and Communication Engineering, School of Engineering and Technology, Sharda University, K. P. III, Greater Noida – 201306, Uttar Pradesh, IN

Abstract

Objectives: This article reports extraction of small signal parameters and analysis of dc behavior of enhanced dual channel (DC) AlGaN/GaN HFET first time. Enhanced device for which small signal model proposed incorporates double channels, field plate and nucleation layer as additional feature for better reliability. Methods/Analysis: Direct method for small signal parameter extraction is employed using cold FET pinch off biasing at lower and upper frequency band. Lower frequency band for analysis is chosen to ensure extraction accuracy for parasitic capacitive elements of our proposed small signal model parameters. Also TCAD simulation environment is utilized for extensive analysis and characterization of device for dc and small signal performance. Findings: The small signal extrinsic and intrinsic parameters are extracted for the proposed device structure that can predict physical as well as RF performance correctly. Simulation results support clear insight about dc performance and functional reliability of device. Novelty/Improvements: Proposed model takes in to consideration most of the important parasitic as well as intrinsic components of device for extraction purpose. The method employed for model is capable for providing higher accuracy in comparison of other approaches. The extracted model and simulation results give clear insight about enhanced device performance in higher frequency range. The reported results are compared with latest published data and found to be in good agreement.

Keywords

Dual Channel AlGaN/GaN HEMT, Double Channel HFET, RF Parameter Extraction, Small Signal Modeling.

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