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Rahimpour Soleimani, H.
- Temperature and Doping Dependencies of Hot Electron Transport Properties in Bulk GaP, InP and Ga0.5In0.5p
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Authors
Affiliations
1 Dept. of Physics, Univ. of Guilan, Rasht, IR
2 Dept. of Physics, Ferdowsi Univ. of Mashhad, Mashhad, IR
3 Department of physics, Shahrood University of Technology, Shahrood, IR
1 Dept. of Physics, Univ. of Guilan, Rasht, IR
2 Dept. of Physics, Ferdowsi Univ. of Mashhad, Mashhad, IR
3 Department of physics, Shahrood University of Technology, Shahrood, IR
Source
Indian Journal of Science and Technology, Vol 2, No 10 (2009), Pagination: 10-13Abstract
An ensemble Monte Carlo simulation has been carriedout to study electron transport properties in GaP, InP and Ga0.5In0.5P materials. The simulation results show that intervalley electron transfer plays a dominant role in higher electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. In addition, the electron velocity in GaP is less sensitive to temperature than other group III-V semiconductors like InP and Ga0.5In0.5P. So GaP devices are expected to be more tolerant to self-heating and high ambient temperature device modeling.Keywords
Ensemble Monte Carlo, Polar Optical Phonons, Deformation Potential, Self-heatingFull Text
References
- Albrecht JD, Wang RP, Ruden PP and Brennan KF (1998) Monte Carlo simulation of GaN in zincblendeand wurtzite structures. J. Appl.Phys. 83, 2185-2190.
- Arabshahi H, Khalvati MR and Rezaee Rokn-Abadi M (2008) Comparison of steady state and transient electron transport in InAs, InP and GaAs. Modern Phys.Lett.B, 22 (17), 1695-1702.
- Arabshahi H, Khalvati MR and Rezaee Rokn-Abadi M (2008) Monte Carlo modeling of hot electron transport in bulk AlAs, AlGaAs and GaAs at room temperature. Modern Phys.Lett.B, 22 (18), 1777-1784.
- Besikci B, Bakir M and Tanatar U (2000) Hot electron simulation devices. J. Appl. Phys. 88 (3) 1243-1247.
- Bhapkar U V and Shur M S (1997) Ensemble Monte Carlo study of electron transport in wurtzite InN. J. Appl. Phys. 82, 1649-1654.
- Bhuiyam S, Senoh M and Mukai T (2003) Comparison of steady state and transient electron Appl. Phys. Lett. 62, 2390-2395.
- Brennan K, Hess K, Tang JY and Iafrate GT (1983) High field electron transport properties. IEEE Trans.Electron Devices, 30, 1750-1755.
- Fischetti MV and Laux SE (1991) Low field electron mobility in GaN. IEEE Trans.Electron Devices, 38, 650-655.
- Foutz BE, Eastman LE, Bhapkar UV and Shur M (1997) Full band Monte Carlo simulation of Zincblende GaN MESFET’s including realistic impact ionization rates. Appl. Phys. Lett. 70, 2849-2854.
- Ghani B, Hashimoto A and Yamamoto A (2003) High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors. J. Appl. Phys. 94, 2779-2783.
- Izuka J and Fukuma M (1990) Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN. Solid-State Electron, 3, 27-33.
- Jacoboni J and Lugli P (1989) The Monte Carlo method for semiconductor and device simulation. Springer-Verlag.
- Jacoboni J and Reggiani L (1983) The Monte Carlo simulation of Semiconductor and Devices. Reviews of Modern Phys. 55 (3) 665-663.
- Kane EO (1957) Band structure calculation in group III and IV materials. J.Phys.Chem. Solids. 1, 249-253.
- Martienssen M and Warlimont H (2005) Springer. hand book of condensed Matter and Materials Data, Springer.
- Newman N, Schilfgaarde V, Kendelewicz T and Spicer WE (1989) GaN based transistor for high power applications. Mater. Res. Soc. Symp. Proc. 21 54-59.
- Ridley BK (1993) Quantum processes in semiconductors. Clarendon Press. Oxford.
- Vurgaftman I and Meyer JI (2001) A review for GaN based devices. J. Appl. Phys. 89 (11) 887-889.
- Yu Y and Cardona M (2001) Fundamentals of Semiconductors. 3rd ed., Springer, Berlin, Heidelberg.