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Raghav, A. K.
- Effect of Vibration on Orthotropic Visco-Elastic Rectangular Plate with Two Dimensional Temperature and Thickness Variation
Authors
1 Amity University, Gurgaon - 122413, Haryana, IN
2 Departement of Mathematics, Pacific University, Udaipur – 313024, Rajasthan, IN
Source
Indian Journal of Science and Technology, Vol 9, No 2 (2016), Pagination:Abstract
As a result of the technological developments in civil, mechanical and aeronautical engineering, visco-elastic plate structures gained popularity in the 20th century. The mainstream of visco- elastic materials are receptive to heat in space technology, highly speed space flights, internal combustion engines, satellites, certain parts of mechanical structures have to man oeuvre under elevated temperatures consequently the state of affairs are thermal sensitive. It is observed that thermal effects are recurrently overlooked in most of the cases so far they have to be taken in to concern. In this paper effect of bi-parabolically variation in temperature is premeditated on vibration of an orthotropic rectangular plate and whose thickness also varies bi-parabolically. Frequency equation is derived by using Rayleigh–Ritz technique with a two-term deflection function. Time period, Deflection and Logarithmic decrement at different points for the first two modes of vibration are calculated for various values of thermal gradients, aspect ratio and taper constants. Mathematics Subject Classification: 2014 AMS Classification No. : 70j30
Keywords
Aspect Ratio, Frequency, Thickness, Taper Parameter, Vibration, Visco-ElasticFull Text
- A Study of Traditional and Surrounding Gate MOSFET using TCAD Simulations
Authors
1 ECE, Amity School of Engineering and Technology, Gurgaon, Haryana, IN
Source
Indian Journal of Science and Technology, Vol 9, No 47 (2016), Pagination:Abstract
In this paper, Traditional and surrounding gate MOSFET are simulated using TCAD Silvaco and report the effect of multigate transistor. As the channel length of transistors is scaling down, a traditional MOSFET suffers from short channel effects and degrade the device performance. The different parameter such as threshold voltage, area, subthreshold slope, channel length modulation and leakage current are extracted for traditional and surrounding gate MOSFET. The parameters obtained from surrounding gate MOSFET is compared with a traditional MOSFET of the same dimension. The Results show that better performance was obtained for surrounding gate MOSFET. Its current drive capability is more as compared to traditional MOSFET .However, benefits of achieving superior performance with surrounding gate MOSFET reduces in terms of poor RF performance. Hence, this paper concludes that surrounding gate MOSFET have huge potential to be a promising contender to the traditional MOSFETs for making of future generation low-power high speed devices which could minimize the occupied area.Keywords
Channel Length Modulation, Leakage Current, Subthreshold Slope, Surrounding Gate MOSFET, Threshold Voltage.Full Text