A Fast Strategy to Determine the Physical and Electrical Parameters of Silicon Photovoltaic Cell

Objectives: This paper proposes a fast strategy to extract the electrical parameters of photovoltaic cell (PV) and determine both the minoritycarrier’s lifetime and the diffusion lengths of photovoltaic cell using the double-diode model. Methods/ Statistical Analysis: The polycrystalline silicon (poly-Si) junction is chosen in this work due to the importance of its proprieties in industrial and economic fields. The proposed method to extract the PV electrical parameters contains two steps. The first is based on the graphical adjustments to choose the initial values of these parameters, and the second method uses numerical approach based on the Modified Newton-Rap son’s algorithm. Findings: The values of obtained parameters are compared to the others methods and give a considerable agreement. The statistical errors (MBE and t-statistic) are about 10-8 and 10-10 respectively. Furthermore, the found values of both the minoritycarrier’s lifetime and the diffusion lengths are precisely comparable with theoretical models, and give a best value. Application/Improvements: The obtained values give very useful information on the cell intrinsic quality, and can improve the conception and realization performances of the solar cell with high conversion efficiency.