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Co-Authors
- Arpan Deyasi
- K. K. Yadav
- N. Chouhan
- R. Thubstan
- S. Norlha
- J. Hariharan
- C. Borwankar
- P. Chandra
- V. K. Dhar
- N. Mankuzhyil
- S. Godambe
- M. Sharma
- K. Venugopal
- K. K. Singh
- N. Bhatt
- K. Chanchalani
- M. P. Das
- B. Ghosal
- S. Godiyal
- M. Khurana
- S. V. Kotwal
- M. K. Koul
- N. Kumar
- C. P. Kushwaha
- K. Nand
- A. Pathania
- S. Sahayanathan
- D. Sarkar
- A. Tolamati
- R. Koul
- R. C. Rannot
- A. K. Tickoo
- V. R. Chitnis
- A. Behere
- S. Padmini
- A. Manna
- S. Joy
- P. M. Nair
- K. P. Jha
- S. Moitra
- S. Neema
- S. Srivastava
- M. Punna
- S. Mohanan
- S. S. Sikder
- A. Jain
- S. Banerjee
- Krati
- J. Deshpande
- V. Sanadhya
- G. Andrew
- M. B. Patil
- V. K. Goyal
- N. Gupta
- H. Balakrishna
- A. Agrawal
- S. P. Srivastava
- K. N. Karn
- P. I. Hadgali
- S. Bhatt
- V. K. Mishra
- P. K. Biswas
- R. K Gupta
- A. Kumar
- S. G. Thul
- R. Kalmady
- D. D. Sonvane
- V. Kumar
- U. K. Gaur
- J. Chattopadhyay
- S. K. Gupta
- A. R. Kiran
- Y. Parulekar
- M. K. Agrawal
- R. M. Parmar
- G. R. Reddy
- Y. S. Mayya
- C. K. Pithawa
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z All
Bhattacharyya, S.
- Investigating Penetration Depth of Boron into P-Doped Silicon by Diffusion Process for P+NN+ SDR Impatt Structure at KA-Band
Abstract Views :372 |
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Authors
Affiliations
1 Dept. of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata-700015, IN
2 Dept. of Electronics and Communication Engineering, Greater Kolkata College of Engineering and Management, 24 Parganas (S)–743387, IN
1 Dept. of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata-700015, IN
2 Dept. of Electronics and Communication Engineering, Greater Kolkata College of Engineering and Management, 24 Parganas (S)–743387, IN
Source
Journal of the Association of Engineers, India, Vol 83, No 3-4 (2013), Pagination: 18-24Abstract
Penetration depth of boron in phosphorous-doped silicon for p+nn+ SDR type IMPATT structure is experimentally investigated by Secondary Ion Mass Spectrometry (SIMS) technique, and also validated using Scanning Electron Microscopy (SEM) instrument in this work. Spatial distribution of the impurity profile for the dopants and also of the constituent atoms is experimentally investigated to evaluate the near-accurate length of junction depth, which is well supported by the SEM measurement also. The measurement clearly gives a pictorial representation of the variation of atoms inside the device. Operating frequency of the device is directly dependent on junction depth, and hence its accurate evaluation carries significant role in designing the device. Two-step diffusion mechanism is considered for fabrication of the device, and impurity profile is numerically solved from Fick's law. Theoretical and experimental data have a very close resemblance which speaks about the accuracy of the investigation. Temperature and orientation dependence of diffusivity is also computed for near accurate estimation. Results are very important for design and fabrication of SDR IMPATT device for microwave performance.Keywords
Diffusion, SEM, SIMS, Junction Depth.- Commissioning of the MACE gamma-ray telescope at Hanle, Ladakh, India
Abstract Views :295 |
PDF Views:115
Authors
K. K. Yadav
1,
N. Chouhan
2,
R. Thubstan
2,
S. Norlha
2,
J. Hariharan
2,
C. Borwankar
2,
P. Chandra
2,
V. K. Dhar
1,
N. Mankuzhyil
2,
S. Godambe
2,
M. Sharma
2,
K. Venugopal
2,
K. K. Singh
1,
N. Bhatt
2,
S. Bhattacharyya
1,
K. Chanchalani
2,
M. P. Das
2,
B. Ghosal
2,
S. Godiyal
2,
M. Khurana
2,
S. V. Kotwal
2,
M. K. Koul
2,
N. Kumar
2,
C. P. Kushwaha
2,
K. Nand
2,
A. Pathania
2,
S. Sahayanathan
1,
D. Sarkar
2,
A. Tolamati
2,
R. Koul
3,
R. C. Rannot
4,
A. K. Tickoo
5,
V. R. Chitnis
6,
A. Behere
7,
S. Padmini
7,
A. Manna
7,
S. Joy
7,
P. M. Nair
7,
K. P. Jha
7,
S. Moitra
7,
S. Neema
7,
S. Srivastava
7,
M. Punna
7,
S. Mohanan
7,
S. S. Sikder
7,
A. Jain
7,
S. Banerjee
7,
Krati
7,
J. Deshpande
7,
V. Sanadhya
8,
G. Andrew
8,
M. B. Patil
8,
V. K. Goyal
8,
N. Gupta
8,
H. Balakrishna
8,
A. Agrawal
8,
S. P. Srivastava
9,
K. N. Karn
9,
P. I. Hadgali
9,
S. Bhatt
9,
V. K. Mishra
9,
P. K. Biswas
9,
R. K Gupta
9,
A. Kumar
9,
S. G. Thul
9,
R. Kalmady
10,
D. D. Sonvane
10,
V. Kumar
10,
U. K. Gaur
10,
J. Chattopadhyay
11,
S. K. Gupta
11,
A. R. Kiran
11,
Y. Parulekar
11,
M. K. Agrawal
11,
R. M. Parmar
11,
G. R. Reddy
12,
Y. S. Mayya
13,
C. K. Pithawa
14
Affiliations
1 Astrophysical Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085, India; Homi Bhabha National Institute, Mumbai 400 085, India, IN
2 Astrophysical Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
3 Formerly at Astrophysical Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
4 Raja Ramanna Fellow at Astrophysical Sciences Division, Mumbai 400 085, India, IN
5 Deceased, IN
6 Department of High Energy Physics, Tata Institute of Fundamental Research, Mumbai 400 005, India, IN
7 Electronics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
8 Control and Instrumentation Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
9 Center for Design and Manufacture, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
10 Computer Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
11 Reactor Safety Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
12 Formerly at Reactor Safety Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
13 Formerly at Reactor Control Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
14 Formerly at Electronics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
1 Astrophysical Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085, India; Homi Bhabha National Institute, Mumbai 400 085, India, IN
2 Astrophysical Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
3 Formerly at Astrophysical Sciences Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
4 Raja Ramanna Fellow at Astrophysical Sciences Division, Mumbai 400 085, India, IN
5 Deceased, IN
6 Department of High Energy Physics, Tata Institute of Fundamental Research, Mumbai 400 005, India, IN
7 Electronics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
8 Control and Instrumentation Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
9 Center for Design and Manufacture, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
10 Computer Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
11 Reactor Safety Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
12 Formerly at Reactor Safety Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
13 Formerly at Reactor Control Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
14 Formerly at Electronics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India, IN
Source
Current Science, Vol 123, No 12 (2022), Pagination: 1428-1435Abstract
The MACE telescope has recently been commissioned at Hanle, Ladakh, India. It had its first light in April 2021 with a successful detection of very high energy gamma-ray photons from the standard candle Crab Nebula. Equipped with a large light collector of 21 m diameter and situated at an altitude of ~4.3 km amsl, the MACE telescope is expected to explore the mysteries of the non-thermal Universe in the energy range above 20 GeV with very high sensitivity. It can also play an important role in carrying out multi-messenger astronomy in India.Keywords
Gamma-ray astronomy, high energy radiative processes, non-thermal Universe, telescope.References
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