Informatics Publishing Limited

P. Vimala ¹, G. Yamuna ¹

Affiliations
1 Department of Electronics and Communication Engineering, Faculty of Engineering and Technology, Annamalai University, Annamalai Nagar, Chidambaram – 608002, Tamil Nadu, IN

Abstract

Objectives: The objective functions for pilot design to minimize the inter-intra block coherence of sensing matrix. The efficient pilot design strategies was considered for the recovery of block sparse channel in pilot aided Orthogonal Frequency Division Multiplexing (OFDM) system using Compressive Sensing (CS) technique Methods: In particular, the pilot design directly influences the construction of sensing matrix in CS Frame work. This paper examines design measure of pilots based on minimizing a weighted sum of the inter and intra block coherence of the equivalent sensing matrix to improve block sparse channel estimation using block sparse CS algorithms. Findings: The multi carrier modulation, OFDM can achieve its benefits over multipath fading channel if Channel coefficients are perfectly estimated at the receiver. Block sparse with varying block size is prevalent in wideband frequency selective channel due to the presence of reflectors in the transmission. The explicit use of channel block sparsity and proper construction of sensing matrix for CS block sparse recovery algorithms yields better reconstruction performance. Applications: The proposed measure of pilot in sensing matrix design for varying block size of block sparse channel significantly outperforms the common inter block coherence along with CS based block sparse recovery algorithm.

Keywords

Channel Estimation, Compressive Sensing, Inter Block Coherence, Intra Block Coherence, Pilot Design

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A. Sharon Geege ¹, P. Vimala ², T. S. Arun Samuel ¹, N. Arumugam ¹

Affiliations
1 Department of Electronics and Communication Engineering, National Engineering College, IN
2 Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, IN

Abstract

This paper deals with a novel Double Gate MOSFET (DG MOSFET) which is constructed by the unification of III group materials (Indium, Gallium) and V group materials (Phosphide, Arsenide) is analyzed. Due to its short channel effect immunization, leakage current reduction and higher scaling potential, DG MOSFET as one of the most comforting devices for low power applications. In this work, we investigated the effect of DG MOSFET based on Indium Phosphide (InP) and Gallium Arsenide (GaAs) on optimal performance and drain current characteristics by replacing traditional DG MOSFET based on silicon. The transistor’s channel length is set to 20 nm. Both devices have been modeled using the NanoHub simulator and characteristics has been examined using Matlab. The descriptive analysis of characteristics has been performed through the corresponding plot structures - energy band structure, ID vs VGS characteristics, ID vs VGS characteristics, transconductance. From the results provided, it has been found that the DG MOSFET device based on InP offers ON current 10^-3A is better than the DG MOSFET device based on Silicon and Gallium Arsenide (GaAs).

Keywords

DG MOSFET, GaAs, InP, ON Current, OFF Current.

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