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Authors
Affiliations
1 Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, SN
Source
International Journal of Scientific Engineering and Technology, Vol 5, No 5 (2016), Pagination: 252-255
Abstract
In this paper we study the influence of [Ga]/[In + Ga] atomic ratio on electric parameters of the CIGS solar cell. We conduct the simulation of a solar cell constituted of window layer (ZnO)/ buffer layer (CdS)/ absorber Cu(In,Ga)Se2 using the SCAPS-1D program. We vary the [Ga]/[In + Ga] atomic ratio according to the values 0.3; 0.5 and 0.7. This variation intended to study the behavior of macroscopic electrical parameters (Voc, Jsc, FF, η), characteristic J/V, conductance G/V, capacitance C/V and external quantum efficiency EQE of the cell. The results obtained show that the performance of CIGS solar cells decrease with increasing in [Ga]/[In+Ga] ratio. A conversion efficiency of about 21.54% is obtained with the cell having a ratio of 0.3. This makes it the most promising approach of our cells studied.
Keywords
CIGS Solar Cells, [Ga]/[In+Ga], Electric Parameters, External Quantum Efficiency, SCAPS-1D.
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