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Sinha, Mileshwar
- A 90nm Low Noise Amplifier Using Active Inductor for Ultra Wideband Application
Authors
Source
Programmable Device Circuits and Systems, Vol 8, No 6 (2016), Pagination: 161-164Abstract
This paper presents a LNA for UWB radio receiver at 2 to 6GHz victimization 0.09µm TSMC Technology wherever 009µm technology is for lower power consumption. UWB radio that created up in between the frequency vary of 2GHz to 6GHz.The basic design of LNA includes a RF electronic equipment within the middle of input matching network and also the output matching network. We’ve designed a LNA that consist low noise figure, good input and output resistivity matching and high gain and stability LNA, wherever operative temperature is 27 ºC gain is 20dB and would have smart stability. we have a tendency to used ltspice tool for the simplest performance and accuracy for results, this work represents associate LNA schematic compose of Common source LNA and Cascode LNA, wherever Common source LNA is employed for glorious input and output matching and also the cascode LNA for low Noise figure and high gain, an extra feature is that single terminated LNA employs inductive supply degeneration conception (inductor Ls is connected to the supply of semiconductor device M1) wherever M1 contains a larger management over the worth of the important a part of the input impedance through the selection of the inductance. Cascode semiconductor device power supply is employed to scale back the interaction of the tuned output with the tuned input.
Keywords
Low-Noise Electronic Equipment (LNA), Frequency (RF) and CMOS, Single Stage Electronic Equipment, Active Passive Component, RF Front.
- Sub-mW Low Noise Amplifier Using Active Inductor for Ultra Wideband Application
Authors
1 Department of ETC, SSTC, SSGI, Bhilai, IN
2 Department of E&I, SSTC, SSGI, Bhilai, IN
Source
Artificial Intelligent Systems and Machine Learning, Vol 8, No 8 (2016), Pagination: 275-278Abstract
In this paper we work on the control of total power consumption of a low noise amplifier using unique design of CMOS active inductor (on chip) for the low voltage RF circuit. We tried to address a replacement methodology of passive inductors by Active Inductors (AI) to improve the circuit performance. And improved parameter like power potency, Noise Figure (NF) and alternate methodology of input and output matching of 50 ohm. Exploiting the new biasing metric, and new design methodology of 1.8v supply, leads to 5.4mW total DC power consumption. We uses 180nm CMOS technology, frequency range of 2-6GHz. This simulation offers the thought of the longer term analysis to design higher LNA in terms of low power consumption, stability and higher range of frequency of operation.