Informatics Publishing Limited

K. R. Vishnupriya ¹, B. Lakshmi ², R. Srinivasan ²

Affiliations
1 Department of Information Technology in SSN College of Engineering, Kalavakkam – 603 110, Chennai, Tamilnadu, IN
2 Department of Information Technology in SSN College of Engineering, Kalavakkam – 603 110, Chennai, Tamilnadu, IN

Abstract

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness and SD doping and less sensitive to source/drain width and length, and work function variations.

Keywords

f_t, FinFET, Scaling, Process Variations.

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