Informatics Publishing Limited

Akhilesh Kumar ¹, Sandhya Kattayat ², H. K. Sublania ³, Jasgurpreet Singh ⁴, K. P. Tewari ¹, P. A. Alvi ⁵

Affiliations
1 Department of Physics, Agra College, Dr. B. R. Ambedkar University, Agra 282001, UP, India., IN
2 Higher Colleges of Technology, PO Box 25026, Abu Dhabi, United Arab Emirates., AE
3 Department of Physics, Government College, Kota- 324001, Rajasthan. India., IN
4 University Centre for Research & Development, Department of Mechanical Engineering, Chandigarh University, Gharuan, Punjab., IN
5 Department of Physics, Banasthali Vidyapith, Banasthali-304022, Rajasthan, India., IN

Abstract

In the early studies, thorough calculations for the band structures of binary and ternary semiconductor compounds have been performed. But in those studies the role of substrate, on which the studied compound is grown, has not been accounted. In this paper, the calculations for the band structures of technologically important binary semiconductors i.e. GaAs and InAs considering the effect of substrate have been performed and the results have been analysed successfully. In results, it has been shown that considering the lattice matched substrate with the grown semiconductor layers is very important for better device performance.

Keywords

GaAs, InAs, Band Structures, K.P Theory, Substrate.

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