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E. L. Pankratov ¹, E. A. Bulaeva ¹

Affiliations
1 Nizhny Novgorod State University, 23 Gagarin Avenue, RU

Abstract

In this paper we consider influence of overgrowth of doped areas of heterostructures on distributions of concentrations of dopants. The doping has been done by diffusion or ion implantation. Several conditions to increase sharpness of p-n-junctions (single and framework bipolar transistors) have been formulated framework technological process. At the same time we analyzed influence of speed of overgrowth of doped areas and mechanical stress in the considered heterostructures on distribution of concentrations of dopants in the structure.

Keywords

Diffusion-Junction Heterorectifier, Implanted-Junction Heterorectifier, Overgrowth of Doped Area, Analytical Approach for Modeling.

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E. L. Pankratov ¹, E. A. Bulaeva ²

Affiliations
1 Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, RU
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Ilinsky street, Nizhny Novgorod, 603950, RU

Abstract

In this paper we introduce an approach to increase integration rate of elements in a three level invertor. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.

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E. L. Pankratov ¹, E. A. Bulaeva ¹

Affiliations
1 Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, RU

Abstract

In this paper we introduce an approach to manufacture a field-effect heterotransistor with two gates. Framework the approach we consider a heterostructure with required configuration, doping of required parts of the heterostructure by diffusion and/or ion implantation and optimization of annealing of do pant or radiation defects. The introduced approach of manufacturing of transistor gives us possibility to decrease area of surface and thickness of the transistor. In this paper we also introduce an approach to make prognosis of mass and heat transport with account variation of parameters of these processes in space in time and nonlinearity of these processes.

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