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Ghasemi-Hamzekolaee, Abbas
- The Role of Nano Particles (Si) in Gate Dielectric
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Authors
Aref Sadeghi Nik
1,
Ali Bahari
2,
Abdol Ghaffar Ebadi
3,
Adel Sadeghi Nik
1,
Abbas Ghasemi-Hamzekolaee
4
Affiliations
1 Member of Young Researchers Club, Islamic Azad University, Jouybar branch, Jouybar, IR
2 Dept. of Physics, Faculty of Basic Science, University of Mazandaran, Babolsar 47416- 1467, IR
3 Member of Young Researchers Club, Islamic Azad University, Sari branch, 48161-194, Sari, IR
4 Dept. of Civil Engineering, Islamic Azad University, Jouybar branch, Jouybar, IR
1 Member of Young Researchers Club, Islamic Azad University, Jouybar branch, Jouybar, IR
2 Dept. of Physics, Faculty of Basic Science, University of Mazandaran, Babolsar 47416- 1467, IR
3 Member of Young Researchers Club, Islamic Azad University, Sari branch, 48161-194, Sari, IR
4 Dept. of Civil Engineering, Islamic Azad University, Jouybar branch, Jouybar, IR
Source
Indian Journal of Science and Technology, Vol 3, No 6 (2010), Pagination: 634-636Abstract
The progressively decreasing feature size of the circuit components, particles and electronic devices has tremendously increased the need for studying and investigating the nano structural properties of materials. We have grown titanium oxide on the Si (100) substrate at 500°C and one atmosphere pressure. Some researchers have believed that an intermediate silicon oxide film can be made between titanium oxide film and substrate but which turned to be of less use. We added silicon nano particles (100 nm) into titanium oxide film that could modify the titanium oxide morphology as revealed in x-ray diffraction patterns and scanning electron microscopy images. The obtained results show that the existence of silicon nano particles in titanium oxide film resulted in better stability. The improved film can thus be used as a good gate dielectric film for the future CMOS (Complementary metal oxide semiconductor) devices.Keywords
Nanotechnology, Nano Transistor, Nano Particle, Gate DielectricReferences
- Bahari A (2008) The Effect of the fractal clusters on the Si (111) – 7×7 surface. World Appl. Sci. J. 4, 261.
- Park B, Im KJ, Cho K and Kim S (2008) Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric. Org. Electron. 9,878-882.
- Bahari A, Morgen P and Li ZS (2006) Valence bend studies of the formation ultra thin pure silicon nitride films on Si(100). Surface Sci. 600, 2966-71.
- Bahari A, Morgen P and Li ZS (2008) Ultra thin silicon nitride films on Si(100) studied with core level photoemission. Surface Sci. 602- 2315-24
- Bahari A, Morgen P, Li ZS and Pederson K (2006) Growth of a stacked silicon nitride/silicon oxide dielectric on Si (100). J. Vacuum Sci. Technol. B. 24, 2119-23.
- Bahari A, Robenhagen U and Morgen P (2005) Grown of ultra thin silicon nitride on Si (111) at low temperatures. Phy. Rev. B. 72, 205323-9.
- Bahari A, Suzban M, Rezaea L and Roodbari M (2009) Chemical bonding configurations at the interface of SiO2/Si (111) – 7x7. Asian J. chem. 21, 1609-1615.
- Rogachev AS (2008) Exothermic reaction waves in multilayer nanofilms. Russ. Chem. Rev. 77, 21-38.
- Gozzelino L, Minetti B, Gerbaldo R, Ghigo G, Laviano FL, Giunchi G, Perini G, Cavallin E, Agostino T, Panetta A, Mezzetti M and Politecnico di Torino E (2007) Effects of nanoparticle doping on electrical properties of MgB2 bulks and wires obtained by reactive Mg liquid infiltration technique. Appl. Super conductivity IEEE.17, 2726-2729.
- Ha HY, Nam SW, Lim TH, Oh IH and Hong SA (1996) Properties of the TiO2 membranes prepared by CVD of titanium tetraisopropoxide. J. Membrane Sci.111, 81-92.
- Kim BH, Ahn JH and Jeong JH (2006) Preparation of TiO2 thin film on SiO2 glass by a spin coating– pyrolysis process. Int. J. Appl. Ceramic Technol. 32, 223-225.
- Morgen P, Bahari A, Pedersen K and Li Z (2007) Plasma assisted growth of ultrathin nitrides on Si surfaces under ultrahigh vacuum conditions. J. Phy. 86, 12019-38.
- Morgen P, Bahari A, Rao MG and Li ZS (2005) Roads to ultra thin silicon oxide. J. Vacuum Technol. A. 23, 201-207.
- Wang YL and Zhang KY (2001) Study of the growth morphology of TiO2 thin films by AFM and TEM. Surface Coatings Technol. 140,155-160.
- Zainal Z and Lee CY (2006) Properties and photoelectron-catalytic behaviour of sol-gel derived TiO2 thin films. J. Sol-Gel Sci.Technol. 37, 19-25.