International Journal of Science, Engineering and Computer Technology

Kanta Rathee ¹, B. P. Malik ¹, Mukesh Kumar ²

Affiliations
1 Department of Applied Sciences, DCRUST, Murthal, IN
2 Sonepat, Electronic Science Department, Kurukshtera University, Kurukshtera, IN

Abstract

We have studied and characterized the process of deposition of tantalum oxide thin flim.For deposition of tantalum pentaoxide thin film we have used the DC magnetron sputtering technique. Oxygen flow rate has been varied to observe the effect on crystallinity ,deposition rate and refractive index of the deposited film. I-V characterstics have been reported using I-V set. The value of leakage current ranges from I =(0 to 2.33E-05 A) with crossponding values of electric field density E = (0 to 5 MV/Cm2). A wide energy band gap has been obtained (4.4eV ) using the transmittance of the deposited film.

Keywords

Oxygen Flow Rate, Ta₂O₅ Thin Films, DC Sputtering Method.

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