Indian Journal of Engineering & Materials Sciences

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Effect of Gamma Irradiation Induced Modifications in Tungsten Oxide Thin Films and Their Potential Applications


Affiliations
1 University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India
2 University School of Information and Communication Technology, Gautam Buddha University, Greater Noida 201 312, India
3 Department of Applied Science & Humanities, ABES Engineering College, Ghaziabad 201 009, India
 

In this work, we study the effect of high gamma doses (600 kGy, 1000 kGy and 1250 kGy) on morphological, structural and optical characteristics of sputtered WO3 thin films. The modifications in these characteristics were analyzed by X-Ray Diffraction, Atomic Force Microscope, UV–Visible spectroscopy, Photoluminescence spectroscopy and Raman spectroscopy. AFM shows the variation in grain size from 61 nm to 91.2 nm after gamma irradiation from unirradiated to gamma-exposed WO3 thin films. XRD and Raman spectroscopy show the monoclinic structure before and after irradiation of WO3 thin films. The optical study illustrates the variation in the optical band gap from 2.80 eV to 2.08 eV after gamma exposure of WO3 thin films. In PL spectra, two emission peaks at a wavelength of 410 nm and 480 nm were observed.

Keywords

Thin films, RF Sputtering, Gamma Irradiation, Atomic force microscope (AFM), X-Ray Diffraction (XRD), Raman Spectroscopy.
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  • Effect of Gamma Irradiation Induced Modifications in Tungsten Oxide Thin Films and Their Potential Applications

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Authors

Deepika .
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India
Deepika Gupta
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India
Vishnu Chauhan
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India
S. K. Sharma
University School of Information and Communication Technology, Gautam Buddha University, Greater Noida 201 312, India
Satyendra Kumar
Department of Applied Science & Humanities, ABES Engineering College, Ghaziabad 201 009, India
Rajesh Kumar
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India

Abstract


In this work, we study the effect of high gamma doses (600 kGy, 1000 kGy and 1250 kGy) on morphological, structural and optical characteristics of sputtered WO3 thin films. The modifications in these characteristics were analyzed by X-Ray Diffraction, Atomic Force Microscope, UV–Visible spectroscopy, Photoluminescence spectroscopy and Raman spectroscopy. AFM shows the variation in grain size from 61 nm to 91.2 nm after gamma irradiation from unirradiated to gamma-exposed WO3 thin films. XRD and Raman spectroscopy show the monoclinic structure before and after irradiation of WO3 thin films. The optical study illustrates the variation in the optical band gap from 2.80 eV to 2.08 eV after gamma exposure of WO3 thin films. In PL spectra, two emission peaks at a wavelength of 410 nm and 480 nm were observed.

Keywords


Thin films, RF Sputtering, Gamma Irradiation, Atomic force microscope (AFM), X-Ray Diffraction (XRD), Raman Spectroscopy.

References