Indian Journal of Engineering & Materials Sciences

Open Access Open Access  Restricted Access Subscription Access

Thickness Dependent Structural, Optical, and Electrical Properties Of ZnSe Thin Films


Affiliations
1 Department of Physics, National Institute of Technology, Kurukshetra, Haryana 136 119, India
 

In present work, nanostructured films of ZnSe are synthesized on glass substrates by using electron beam vacuum evaporation technique. To enhance the luminescence performance and electrical conductivity, the optimal film thickness are investigated for which films of thickness 250 nm and 500 nm are grown on glass substrates. Additionally, films’ crystal structures are also characterized. The XRD pattern revealed that the synthesized films exhibit preferred orientation of ZnSe (111) lattice which exhibits polycrystalline state having cubic zinc blende structure. Various structural parameters such as their crystallite sizes, strain developed in films, and their dislocation densities are also calculated. UV/VIS/NIR spectrophotometer indicates that visible transmittance decreased while the infrared transmittance switching efficiency increased as the film thickness increased from 250 nm to 500 nm. Moreover, the optical energy gaps of ZnSe films were in a range of 2.1-2.20 eV which is comparatively smaller in comparison to their bulk counterparts revealing their confinement in nano-dimensions. The study of their luminescence properties yields that the film of thickness 250 nm yield better results in blue spectral region which is also illustrated through CIE plots. The reason could be that for smaller film thickness electrons can easily jump to excited states for similar excitations owning to smaller crystallite sizes and thus showed greater luminescence. However, from the analysis of its electrical characteristics, the enhanced electrical conductivity is captured for the films having thickness of 500 nm. Therefore, the enhanced blue emission in the optimized film thickness indicates that these films can be utilized as luminescent materials.

Keywords

ZnSe, Thin Films, Transmittance Spectra, Photoluminescence, Electrical Properties
User
Notifications
Font Size

  • Güzeldir B, Sağlam M, & Ateş A, J Alloys Compd, 506 (2010) 388.

  • Othonos A, Lioudakis E, Tsokkou D, Philipose U, & Ruda HE, J Alloys Compd (2009) 483 (2009) 600.

  • Ippen C, Greco T, Kim Y, Kim J, Oh MS, Han CJ, & Wedel A, Org Electron, 15(2014) 126.

  • Alfano RR, Wang QZ, Jimbo T, Ho PP, Bhargava RN, & Fitzpatrick BJ, Phys Rev A, 35(1987) 459.

  • Toma O, Ion L, Iftimie S, Antohe VA, Radu A, Raduta AM, & Antohe S, Appl Surf Sci 478 (2019) 831.

  • Bang J, Park J, Lee JH, Won N, Nam J, Lim J, & Kim S, Chem Mater, 22(2010) 233.

  • Toma O, Antohe VA, Panaitescu AM, Iftimie S, Răduţă AM, Radu A, & Antohe Ş, Nanomaterials, 11(2021) 2841.

  • Lohar GM, Jadhav ST, Takale MV, Patil RA, Ma YR, Rath MC, & Fulari VJ, J Colloid Interface Sci, 458 (2015) 136.

  • Lohar GM, Dhaygude HD, Patil RA, Ma YR, & Fulari VJ, J Mater Sci Mater Electron, 26(2015) 8904.

  • Abdalameer NK, Mazhir SN, & Aadim KA, Energy Rep, 6 (2020) 447.

  • Chuhadiya S, Sharma R, Patel SL, Chander S, Kannan MD, & Dhaka MS, Phys E Low-Dimens Syst Nanostructures, 117(2020) 113845.

  • Khan TM, Mehmood MF, Mahmood A, Shah A, Raza Q, Iqbal A, & Aziz U, Thin Solid Films, 519(2011) 5971.

  • Mahalingam T, Dhanasekaran V, Chandramohan R, & Rhee JK, J Mater Sci, 47(2012), 1950.

  • Bakiyaraj G, & Dhanasekaran R, Appl Nanosci, 3(2013) 125.

  • Khalfi R, Talantikite-Touati D, Tounsi A, & Merzouk H, Opt Mater, 106 (2020) 109989.

  • Li S, Wang L, Su X, Pan Y, Gao D, & Han X, Thin Solid Films, 692 (2019) 137599.

  • Ke J, Zhang R, Zhang P, Yu R, Cao X, Kuang P, & Wang B, Superlattices Microstruct, 156 (2021) 106965.

  • Seto JY, J Appl Phys, 46(1975) 5247.

  • Van der Drift A, Philips Res Rep, 22(1967) 267.

  • Knuyt G, Quaeyhaegens C, D'haen J, & Stals LM, Phys Status Solidi B, 195(1996) 179.

  • Barna PB, & Adamik MJTSF, Thin solid films, 317(1998) 27.

  • Cullity BD, Addison-Wesley Publishing, (1956).

  • Harris GB, The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 43(1952) 113.

  • Williamson GK, & Smallman RE, Philosophical magazine, 1(1956) 34.

  • Stokes AR, & Wilson AJC, Proceedings of the Physical Society (1926-1948), 56(1944) 174.

  • Tauc J, & Menth A, J Non Cryst Solids, 8 (1972) 569.


Abstract Views: 30

PDF Views: 20




  • Thickness Dependent Structural, Optical, and Electrical Properties Of ZnSe Thin Films

Abstract Views: 30  |  PDF Views: 20

Authors

Tripti Gupta
Department of Physics, National Institute of Technology, Kurukshetra, Haryana 136 119, India
R. P. Chauhan
Department of Physics, National Institute of Technology, Kurukshetra, Haryana 136 119, India

Abstract


In present work, nanostructured films of ZnSe are synthesized on glass substrates by using electron beam vacuum evaporation technique. To enhance the luminescence performance and electrical conductivity, the optimal film thickness are investigated for which films of thickness 250 nm and 500 nm are grown on glass substrates. Additionally, films’ crystal structures are also characterized. The XRD pattern revealed that the synthesized films exhibit preferred orientation of ZnSe (111) lattice which exhibits polycrystalline state having cubic zinc blende structure. Various structural parameters such as their crystallite sizes, strain developed in films, and their dislocation densities are also calculated. UV/VIS/NIR spectrophotometer indicates that visible transmittance decreased while the infrared transmittance switching efficiency increased as the film thickness increased from 250 nm to 500 nm. Moreover, the optical energy gaps of ZnSe films were in a range of 2.1-2.20 eV which is comparatively smaller in comparison to their bulk counterparts revealing their confinement in nano-dimensions. The study of their luminescence properties yields that the film of thickness 250 nm yield better results in blue spectral region which is also illustrated through CIE plots. The reason could be that for smaller film thickness electrons can easily jump to excited states for similar excitations owning to smaller crystallite sizes and thus showed greater luminescence. However, from the analysis of its electrical characteristics, the enhanced electrical conductivity is captured for the films having thickness of 500 nm. Therefore, the enhanced blue emission in the optimized film thickness indicates that these films can be utilized as luminescent materials.

Keywords


ZnSe, Thin Films, Transmittance Spectra, Photoluminescence, Electrical Properties

References