Indian Journal of Engineering & Materials Sciences

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Synthesis and structural characterization of magnetic semiconductor silver iron germanium selenide (Ag2FeGeSe4)


Affiliations
1 Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela, Bolivarian Republic of
2 Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela, Bolivarian Republic of
3 Facultad de Ingeniería, Universidad Libre, Bogotá 111071, Colombia

The quaternary semiconductor compound Ag2FeGeSe4, belonging to the system I2-II-IV-VI4 and synthesized by the melt and anneal technique, was structurally characterized by Rietveld refinement of the powder X-ray diffraction data. This compound crystallizes in the orthorhombic space group Pmn21, Z = 4, with unit cell parameters a = 7.6478(1) Å, b = 6.5071(1) Å, c = 6.4260(1) Å, and V = 319.79(1) Å3, in a wurtzite-stannite arrangement with a Cu2CdGeS4-type structure. The Debye temperature (D) estimated for this compound was 194 K.
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  • Synthesis and structural characterization of magnetic semiconductor silver iron germanium selenide (Ag2FeGeSe4)

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Authors

Gerzon E Delgado
Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela, Bolivarian Republic of
Eugenio Quintero
Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela, Bolivarian Republic of
Rafael Tovar
Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela, Bolivarian Republic of
Miguel Quintero
Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela, Bolivarian Republic of
Carlos Rincón
Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela, Bolivarian Republic of
Pilar Delgado-Niño
Facultad de Ingeniería, Universidad Libre, Bogotá 111071, Colombia

Abstract


The quaternary semiconductor compound Ag2FeGeSe4, belonging to the system I2-II-IV-VI4 and synthesized by the melt and anneal technique, was structurally characterized by Rietveld refinement of the powder X-ray diffraction data. This compound crystallizes in the orthorhombic space group Pmn21, Z = 4, with unit cell parameters a = 7.6478(1) Å, b = 6.5071(1) Å, c = 6.4260(1) Å, and V = 319.79(1) Å3, in a wurtzite-stannite arrangement with a Cu2CdGeS4-type structure. The Debye temperature (D) estimated for this compound was 194 K.