Open Access Open Access  Restricted Access Subscription Access

Comparison of Temperature Dependent Performance and Analysis of SWCNT bundle and Copper as VLSI Interconnects


Affiliations
1 Department of Electronics and Communication Engineering, Thapar University, Patiala, India
2 Department of Electronics and Communication Engineering, National Institute of Technology, Jallandhar, India
 

This paper presents the analysis and the performance of Single Walled Carbon Nanotube (SWCNT) bundle as VLSI interconnects by considering the effect of temperature for different technology nodes. An equivalent temperature dependent RLC circuit model presented and comprehensive analysis of delay and power is done for 32nm, 22nm and 16nm technology nodes for both SWCNT bundle interconnects and copper interconnects. It is revealed form the results that SWCNT bundle interconnects offers smaller value of resistances and it due to its longer mean free path (MFP) of SWCNT as compare to copper interconnects. On the basis of impedance parameters, simulation results are also present which show that the densely packed SWCNT bundle interconnects can easily be replaced with its counterpart copper interconnects for global interconnects. Hence SWCNT bundle interconnects is a promising alternative to copper as VLSI interconnect for advanced technology nodes.

Keywords

Interconnects, Technology Nodes, Single-Walled Carbon Nanotubes (SWCNT), Very Large Scale Integration (VLSI), Temperature Dependency.
User
Notifications
Font Size

Abstract Views: 103

PDF Views: 0




  • Comparison of Temperature Dependent Performance and Analysis of SWCNT bundle and Copper as VLSI Interconnects

Abstract Views: 103  |  PDF Views: 0

Authors

Karmjit Singh
Department of Electronics and Communication Engineering, Thapar University, Patiala, India
Balwinder Raj
Department of Electronics and Communication Engineering, National Institute of Technology, Jallandhar, India

Abstract


This paper presents the analysis and the performance of Single Walled Carbon Nanotube (SWCNT) bundle as VLSI interconnects by considering the effect of temperature for different technology nodes. An equivalent temperature dependent RLC circuit model presented and comprehensive analysis of delay and power is done for 32nm, 22nm and 16nm technology nodes for both SWCNT bundle interconnects and copper interconnects. It is revealed form the results that SWCNT bundle interconnects offers smaller value of resistances and it due to its longer mean free path (MFP) of SWCNT as compare to copper interconnects. On the basis of impedance parameters, simulation results are also present which show that the densely packed SWCNT bundle interconnects can easily be replaced with its counterpart copper interconnects for global interconnects. Hence SWCNT bundle interconnects is a promising alternative to copper as VLSI interconnect for advanced technology nodes.

Keywords


Interconnects, Technology Nodes, Single-Walled Carbon Nanotubes (SWCNT), Very Large Scale Integration (VLSI), Temperature Dependency.