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Authors
Affiliations
1 Department of Physics, Indian Institute of Technology, New Delhi-110016, IN
Source
Invertis Journals of Science & Technology, Vol 9, No 3 (2016), Pagination: 129-133
Abstract
We fabricate PEDOT:PSS/n-Si heterojunction diode by deposition of Poly (3,4-ethylenedioxythiophene)- poly (styrenesulfonate) (PEDOT:PSS) on n-type Si wafer using spin coating process. In this study, temperature dependent electrical properties of the diode were investigated. This heterojunction diode showed a good quality rectifying behavior. It was found that the ideality factor increases and barrier height decreases with decrease in temperature. Such a behavior is attributed to barrier inhomogeneities. Resistivity measurements showed that resistivity decreases with increasing temperature.
Keywords
PEDOT:PSS, Heterojunction, Ideality Factor.
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