Invertis Journals of Renewable Energy

Sobinder Singh ¹, Tuhin Datta ², Madan Mohan Bajaj ³, Deepak Kumar ⁴

Affiliations
1 Department of Applied Sciences, Maharaja Surajmal Institute of Technology, Guru Gobind Singh Indraprastha University, Delhi, IN
2 Department of Physics, Ramjas College, North Campus, University of Delhi, Delhi, IN
3 Department of Physics & Astrophysics, University of Delhi, Delhi, IN
4 Muslim Inter College, Asara (Baghpat), IN

Abstract

BIS processes follow linear as well as non linear dynamics. Under extreme chaotic condition a certain BIS process moves towards far from equilibrium state.The BIS energy is distributed in the form of quanta among the bionanoparticles prevailing within the chaotic objects. In order to visualize the pattern of this energy distribution we hired the method suggested by Monte Carlo to comprehend the matter in a better way.

Keywords

BIS Processes, Monte Carlo Method, Quantum Bionanostructures, Far-From Equilibrium States.

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Sobinder Singh ¹

Affiliations
1 Department of Applied Sciences, Maharaja Surajmal Institute of Technology, Guru Gobind Singh Indraprastha University, Delhi, IN

Abstract

Present paper describes completely the effect of gravity of the universal system which is regarded here as the surrounding from the thermodynamical point of view. In order to advocate the logic we have taken under consideration of anti desitter apace conformal theory along with that of Hawkins as well. From our perseverance it is not to deny that an incident occurring in the universe endangers the globe. We have considered such n number of incidents given forth by the black holes and gravitational waves pertaining to enhancement of energy. Perfectle in the conclusion we have decided to take the precautions for not to be in vain.

Keywords

Energy, Entropy, Gauge Gravity, Black Holes, QFT.

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Sobinder Singh ¹

Affiliations
1 Department of Applied Sciences, Maharaja Surajmal Institute of Technology Guru Gobind Singh Indraprastha University, Delhi, IN

Abstract

Recent Si-CMOS transport models in Nanoscale paradigm have been analyzed and compared in this work. Modeling scenarios for each of these models are presents and compared with the others. Modeling of some nanoscale parameters such asmobility (μ), temperature (T), injection velocity (V_inj), backscattering coefficient (R_B), and effective electric field (E_eff) are presented in some or all of these models forshort channel effect (SCE) condition.A new proposed model for carrier transport low field mobility is introduced and compared with these models based on elastic and inelastic scattering mechanisms and channel potential profile (V_x). Observations and recommendations results taken from the evaluated comparison are: determining the simultaneous injection and temperature dependence of the sum of the majority and minority carrier mobilitiesin silicon wafers is an important issue in modeling mobility. Insertion of partial mono-layers of oxygen during silicon epitaxial of the channel layer is the best in modeling the effective electric field effect in nanoscale CMOS transport models. Furthermore, the proposed model conducts minimum computational time when compared with BSIM6 model and the other voted models with more than 46.23% saving of BSIM6 running time while BSIM6 model got the second low computational cost model. This will pave the road into efficient and modified modeling approach that optimize CMOS functionality for scales lower than 22nm in addition to leakage current density mitigation.

Keywords

Backscattering Coefficient(R_B), channel Potential Profile (V_x), Complementary Metal Oxide Semiconductor (CMOS), Computational Time; Effective Electric Field (E_eff), Injection Velocity (V_inj), Mobility (μ), Short Channel Effect (SCE).

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Sobinder Singh ¹, Tuhin Datta ², Madan Mohan Bajaj ³

Affiliations
1 Department of Applied Sciences, Maharaja Surajmal Institute of Technology, Guru Gobind Singh Indraprastha University, Delhi, IN
2 Department of Physics, Ramjas College, North Campus, University of Delhi, Delhi, IN
3 Department of Physics & Astrophysics, University of Delhi, Delhi, IN

Abstract

Energized nociceptons are the particles associated with the quanta of BIS mechanism. The Ricci flow was introduced by Hamilton. It plays an important role in the proof of the Poincare conjecture. The behavior of a Nocicepton is comparable with that of a quantum wormhole in space-time foam. Suffice it can be described as a Ricci flow. Enhancement of entropy makes a system disordered. Hence enhances the energy of the BIS system along with the same of the surrounding galactic objects. In our present paper, the evolution of chaotic geometries under Ricci flow is studied. Using the properties of a quantum wormhole whose throats either pinch off or evolve to a monotonically growing state, we have calculate Boltzman-Shannon entropy to study the chaotic behavior of the nociceptons in four dimensional BIS space.

Keywords

Boltzman-Shannon Entropy, Chaotic Nociceptons, BIS Space, Ricd Flow Equations.

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