Invertis Journals of Renewable Energy

Nanasaheb P. Huse ¹, Deepak S. Upadhyea ², Avinash S. Dive ¹, Rampahal Sharma ¹

Affiliations
1 Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), IN
2 Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), IN

Abstract

Cu₂S Thin Film have been synthesized by simple and economic solution growth technique onto silica glass substrate with bath temperature at 40°C for an hour. Optical, properties of the prepared Thin Films were investigated by UV-Visible Spectrophotometer and Electrical properties of the prepared Thin Films were investigated by I-V Measurement System. The optical band gap was calculated by plotting Energy (hν) versus (αhν)² and it was found to be 2.315 eV which is in very good agreement with the reported values. The semiconducting nature of the film has been confirmed from I-V Measurement curve which has shown ohmic nature in dark condition. Surface morphology have been studied by Scanning Electron Microscopy which revealed entire substrate surface was covered with uniform deposition which contains irregular shaped grains are uniformly distributed.

Keywords

Cu₂S Thin Film, Solution Growth Technique, Optical Band Gap.

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