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Effect of Reaction Time on Structural Properties of ZnO:Al Films


Affiliations
1 Department of Electronics and Computer Technology, Sumy State University, Sumy, Ukraine
2 Department of Physics, Sogang University, Seoul, Korea, Republic of
3 Department of Electronics, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India
4 Applied Physics Department, The M.S. University of Baroda, Vadodara-390001, India
 

Undoped and Al doped ZnO films are obtained by chemical bath deposition onto glass substrates. Investigations of the effect of reaction time on structural and sub-structural features were carried out using high resolution scanning electron microscopy (SEM) and X-ray diffraction analysis. The effects of deposition time on elemental composition are found. Deposited ZnO and ZnO:Al films have a hexagonal structure with growth texture of [002]. Lattice constants of undoped material weakly depend on the time of synthesis and vary in the range of a=0.32486-0.32548 nm, c=0.52064-0.52149 nm. Simultaneously, lattice constants of Al doped ZnO films vary in the wide range: a=0.32490-0.31997 nm, c=0.52293-0.52116 nm. The coherent scattering domain size (CSD) of undoped ZnO are in the range of (L(100)=(24.5-27.3) nm, L(002)=(26.4-28.8) nm, L(101)=(25.0-27.1) nm). In the ZnO:Al films the CSD size increased with increasing the duration of their synthesis from 45 to 90 min (L(100)=(19.5-52.3) nm, L(002)=23.2-55.0) nm, L(101)=(17.6-48.3) nm). Further increase of reaction time up to 120 min led to a significant reduction of the CSD size in all crystallographic directions (L(100)=38.0 nm, L(002)=39.0 nm, L(101)=39.4 nm) which was due to the peculiarities of ZnO:Al growth.

Keywords

ZnO, ZnO:Al, Chemical Bath Deposition, Structure, Sub-Structure.
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  • Effect of Reaction Time on Structural Properties of ZnO:Al Films

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Authors

T. O. Berestok
Department of Electronics and Computer Technology, Sumy State University, Sumy, Ukraine
A. S. Opanasyuk
Department of Electronics and Computer Technology, Sumy State University, Sumy, Ukraine
D. I. Kurbatov
Department of Electronics and Computer Technology, Sumy State University, Sumy, Ukraine
H. Cheong
Department of Physics, Sogang University, Seoul, Korea, Republic of
U. B. Trivedi
Department of Electronics, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India
D. Lakshminarayana
Department of Electronics, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India
C. J. Panchal
Applied Physics Department, The M.S. University of Baroda, Vadodara-390001, India
Priya Suryavanshi
Applied Physics Department, The M.S. University of Baroda, Vadodara-390001, India

Abstract


Undoped and Al doped ZnO films are obtained by chemical bath deposition onto glass substrates. Investigations of the effect of reaction time on structural and sub-structural features were carried out using high resolution scanning electron microscopy (SEM) and X-ray diffraction analysis. The effects of deposition time on elemental composition are found. Deposited ZnO and ZnO:Al films have a hexagonal structure with growth texture of [002]. Lattice constants of undoped material weakly depend on the time of synthesis and vary in the range of a=0.32486-0.32548 nm, c=0.52064-0.52149 nm. Simultaneously, lattice constants of Al doped ZnO films vary in the wide range: a=0.32490-0.31997 nm, c=0.52293-0.52116 nm. The coherent scattering domain size (CSD) of undoped ZnO are in the range of (L(100)=(24.5-27.3) nm, L(002)=(26.4-28.8) nm, L(101)=(25.0-27.1) nm). In the ZnO:Al films the CSD size increased with increasing the duration of their synthesis from 45 to 90 min (L(100)=(19.5-52.3) nm, L(002)=23.2-55.0) nm, L(101)=(17.6-48.3) nm). Further increase of reaction time up to 120 min led to a significant reduction of the CSD size in all crystallographic directions (L(100)=38.0 nm, L(002)=39.0 nm, L(101)=39.4 nm) which was due to the peculiarities of ZnO:Al growth.

Keywords


ZnO, ZnO:Al, Chemical Bath Deposition, Structure, Sub-Structure.