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Authors
Affiliations
1 ITM University, Gurgaon, Haryana, IN
Source
International Journal of Scientific Engineering and Technology, Vol 4, No 2 (2015), Pagination: 32-35
Abstract
A detailed review on the Carbon Nanotube Filed Effect Transistors (CNTFETs) has been given. A little description about what are carbon nanotubes is also been covered. Various simulation results have also been included in this paper in order to provide better understanding about the carbon nanotubes field effect transistors. Characteristic Graphs of a C-CNTFET with n=10. m=11 (diameter=1.4246 nm) have been studied. Threshold voltage of CNTFETs vs n (for m=0) is also simulated. Equivalent high-frequency small-signal circuit model for a Nanotube transistor has also been analyzed. Also current voltage relationship of the CNTFET with respect to gate oxide thickness and dielectric constant has been analyzed.
Keywords
Chirality, CNTFETs, Graphene, HSPICE, MOSFETs, Nano-Ribbon, Quantum Capacitance.
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