Comparative Analysis of Transimpedance Amplifier of 45 nm and 180 nm CMOS Technology

This paper gives a comparative analysis of an inductorless Complementary Metal Oxide Semiconductor (CMOS) Single-ended current-mode Transimpedance Amplifier (TIA) intended for use in front-end Optical communication for wideband operation. This technique uses N similar TIAs in parallel configuration to boost the overall bandwidth as well as the transimpedance gain which is not possible with voltage-mode circuits. Using this method, we achieved the high bandwidth with high transimpedance gain, with the minimum power consumption of 64.5 and 1.6 mW for a 45 nm and 180 nm CMOS digital process respectively.