Effects of Metal Gate Electrode and HfO2 in Junction Less Vertical Double Gate MOSFET

In this paper, we propose a novel design analysis for a Junctionless Double Gate Vertical MOSFET (JLVMOS) with metal gate electrode and HfO₂, for which the simulations have been performed using TCAD (ATLAS), The simulated results exhibits significant improvements in comparison to conventional JLVMOS device with a polysilicon gate electrode and ITRS values for different node technology. In place of polysilicon gate and SiO₂ we have used metal gate and hafnium dioxide (HfO₂) respectively and observed that metal gate electrode with HfO₂ in JLVMOS shows drain current is 1.77mA, for a gate voltage of 1V and an average subthreshold swing, DIBL (Drain Induced Barrier Lowering) effect and leakage current are 61.01mV per decade, 40.4mV/V and 1.4nA/μm respectively. This significant improvement in drain current can be exploited for various low power high-performance circuit applications.