International Journal of Scientific Engineering and Technology

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Effect of [Ga]/[In+Ga] Atomic Ratio on Electric Parameters of Cu(In,Ga)Se2 Thin Film Solar Cells


Affiliations
1 Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, Senegal
 

In this paper we study the influence of [Ga]/[In + Ga] atomic ratio on electric parameters of the CIGS solar cell. We conduct the simulation of a solar cell constituted of window layer (ZnO)/ buffer layer (CdS)/ absorber Cu(In,Ga)Se2 using the SCAPS-1D program. We vary the [Ga]/[In + Ga] atomic ratio according to the values 0.3; 0.5 and 0.7. This variation intended to study the behavior of macroscopic electrical parameters (Voc, Jsc, FF, η), characteristic J/V, conductance G/V, capacitance C/V and external quantum efficiency EQE of the cell. The results obtained show that the performance of CIGS solar cells decrease with increasing in [Ga]/[In+Ga] ratio. A conversion efficiency of about 21.54% is obtained with the cell having a ratio of 0.3. This makes it the most promising approach of our cells studied.

Keywords

CIGS Solar Cells, [Ga]/[In+Ga], Electric Parameters, External Quantum Efficiency, SCAPS-1D.
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  • Effect of [Ga]/[In+Ga] Atomic Ratio on Electric Parameters of Cu(In,Ga)Se2 Thin Film Solar Cells

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Authors

Ousmane Diagne
Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, Senegal
Alain Kassine Ehemba
Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, Senegal
Demba Diallo
Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, Senegal
Ibrahima Wade
Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, Senegal
Mouhamadou Mamour Soce
Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, Senegal
Moustapha Dieng
Laboratory of Semiconductors and Solar Energy, Physics Department, University Cheikh Anta Diop, Dakar, Senegal

Abstract


In this paper we study the influence of [Ga]/[In + Ga] atomic ratio on electric parameters of the CIGS solar cell. We conduct the simulation of a solar cell constituted of window layer (ZnO)/ buffer layer (CdS)/ absorber Cu(In,Ga)Se2 using the SCAPS-1D program. We vary the [Ga]/[In + Ga] atomic ratio according to the values 0.3; 0.5 and 0.7. This variation intended to study the behavior of macroscopic electrical parameters (Voc, Jsc, FF, η), characteristic J/V, conductance G/V, capacitance C/V and external quantum efficiency EQE of the cell. The results obtained show that the performance of CIGS solar cells decrease with increasing in [Ga]/[In+Ga] ratio. A conversion efficiency of about 21.54% is obtained with the cell having a ratio of 0.3. This makes it the most promising approach of our cells studied.

Keywords


CIGS Solar Cells, [Ga]/[In+Ga], Electric Parameters, External Quantum Efficiency, SCAPS-1D.