ICTACT Journal on Microelectronics

Mourad Hebali ¹, Mohammed Barka ², Abdelkader Baghdad Bey ², Miloud Abboun Abid ¹, Mohammed Benzohra ³, Djilali Chalabi ¹, Abdelkader Saïdane ¹

Affiliations
1 Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, AL
2 Department of Electrical Engineering, University of Mascara, AL
3 Department of Networking and Telecommunications, University of Rouen, FR

Abstract

In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.

Keywords

In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.

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Mohammed Berka ¹, Mourad Hebali ², Abdelkader Baghdad Bey ¹, Menaouer Bennaoum ¹, Zoubir Mahdjoub ³

Affiliations
1 Department of Electrical Engineering, University of Mascara, DZ
2 Department of Electrical Engineering, Ecole Nationale Polytechnique d'Oran Maurice Audin, DZ
3 Laboratory AMEL, University of Sidi-Bel-Abbes, DZ

Abstract

The purpose of this article is the miniaturization of a microwave passband filter. The miniaturized filter is a capacitive gap filter coupled in series by their ends. Our miniaturization procedure is based on the combination of the bandpass filter with periodic metamaterial resonators of spiral shape with negative permeability (μ<0). We will maintain nine (SRRs) of the same dimensions vertically to the capacitive gaps of the primary filter to control the resonance frequency of the overall structure. The dielectric substrate chosen for the etching of the capacitive resonators of the primary filter and metamaterial resonators (SRRs) is the Rogers RO 4003™ which has the dielectric constant (εr = 3.55) and the loss tangent (tanδ = 0.0027). Since there are no scientific or experimental results in the scientific literature for this type of complicated structure, we had to make simulations using the software CST Microwave Studio.

Keywords

Band-Pass Filter, Capacitive Gaps, CST Microwave Studio, Metamaterials, Permeability, Permittivity, SRRs.

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