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Energy Effective Mass Dependence of Electron Tunneling Through CDS/CDSE, ALXGA1-XAS/GAAS and ALSB/INAS Multiple Quantum Barriers
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Tunneling of electrons through the barriers in heterostructures devices is investigated by using the unified Transfer Matrix Method. The effect of barrier width on electron transmission coefficients has also been examined for different pairs of semiconductor devices of significant research interest in current years. Such Pairs involve: AlxGa1-xAs/GaAs, AlSb/InAs, and CdS/CdSe quantum barriers with varying dimensions reduced from 20 nm to 5nm to observe how tunneling properties are affected by scaling. The effective electron masses in the well and barrier regions typically vary with constituent materials. It has been shown that the transmission coefficients are significantly changed due to the coupling. The effective mass dependent transmission coefficients for electron energy have been evaluated in terms of the mass discontinuity metrics. The electron transmission coefficients for each pair of quantum structures are plotted with the variation of its electron energy, normalized to its potential energy. The resonant state obtained here will be beneficial for designing detectors, optical filters, photonic-switching devices and other optoelectronic and photonic devices.
Keywords
Heterostructures, Quantum Transport, Resonant Tunneling, Electron Wave-Guides, Transfer-Matrix.
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- Zhores I. Alferov, “Nobel Lecture: The Double Heterostructure Concept and Its Applications in Physics, Electronics, and Technology”, Review of Modern Physics, Vol. 73, No. 2, pp. 697-703, 2002.
- Marco Zoli, “Instantonic Methods for Quantum Tunneling in Finite Size”, Brazilian Journal of Physics, Vol.39, No. 4, pp. 1-12, 2009.
- Boris Mikhailovich Karnakov, Vladimir Pavlovich Krainov, “WKB Approximation in Atomic Physics”, Springer, 2013.
- Chang Soo Park, Myung Geun Jeong, Sahng Kyoon Yoo and D.K. Park, “Double-Well Potential: The WKB Approximation with Phase Loss and Anharmonicity Effect”, Physical Review A, Vol. 58, pp. 3443-3449, 1998.
- Vikas Maheshwari, Soma Shekhar Mali Patil, Neha Gupta and Rajib Kar, “Modified WKB Approximation for Fowler-Nordheim Tunneling Phenomenon in Nano- Structure based Semiconductors”, Proceedings of International Conference on Emerging Trends in Information Technology and Engineering, pp. 446-457, 2020.
- Tao Pang, “A Numerical Method for Quantum Tunneling”, AIP Computers in Physics, Vol. 9, pp. 602-612, 1995.
- R. Tsu and L Esaki, “Tunnelling in Finite Superlattice”, Applied Physics Letters, Vol. 22, pp. 562-568, 1973
- D.K. Roy, “Quantum Mechanical Tunnelling and Its Applications”, World Scientific Publishing, pp. 1-14, 1986.
- Hemendra Ghimire, P.V.V. Jayaweera, Divya Somvanshi, Yanfeng Lao and A.G. Unil Perera, “Review Recent Progress on Extended Wavelength and Split- Off Band Heterostructure Infrared Detectors”, Micromachines, Vol. 11, pp. 547-556, 2020.
- Deepika Tyagi, Huide Wang, Wenchuan Huang, “Recent Advances in Two Dimensional- Material-based sensing Technology Toward Health and Environmental Monitoring Applications”, Nanoscale, Vol. 6, no. 6, pp. 1-12, 2020.
- Mitra Dutta and Michael A. Stroscio, “Advanced Semiconductor Heterostructures”, World Scientific Publishing, 2003.
- Dongwoo Lee, David Blaauw, Dennis Sylvester, “Gate Oxide Leakage Current Analysis and Reduction for VLSI Circuits”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 12, No. 2, pp. 1-23, 2004.
- Juan C. Ranuarez, M.J. Deen and Chih Hung Chen, “A Review of Gate Tunneling Current in MOS Devices”, Microelectronics Reliability, Vol. 46, No. 12, pp. 1939-1956, 2006.
- Victor Barsan, Mihaela Cristina Ciornei, “Semiconductor Quantum Wells with Ben Daniel-Duke Boundary Conditions: Approximate Analytical Results”, European Journal of Physics, Vol. 38, No. 2, pp. 1-14, 2017.
- Sonia Bagumako, Ludovico Desplanque and Nicolas Wichmann, “100 nm AlSb/InAs HEMT for Ultra Low-Power Consumption, Low-Noise Applications”, Scientific World, Vol. 2014, pp. 1-6, 2014.
- P.A. Alvi, “Transformation of Type-II inAs/AlSb Nanoscale Heterostructure into Type-I Structure and Improving Interband Optical Gain”, Physica Status Solidi, Vol. 254, No. 5, pp. 1-24, 2017.
- Jian Feng and Min Xiao, “Lasing Action in Colloidal CdS/CdSe/CdS Quantum Wells”, Applied Physics Letters, Vol. 87, No. 2, pp. 1-16, 2005.
- C. Bender and D. Hook, “Quantum Tunneling as a Classical Anomaly”, Journal of Physics A- Mathematical and Theoretical, Vol. 44, No. 37, pp. 1-13, 2010.
- J. Vahedi and K. Nozari, “The Ramsauer-Townsend Effect in the Presence of the Minimal Length and Maximal Momentum”, Acta Physica Polonica A, Vol. 122, pp. 1-16, 2012.
- C.S. Ho, J.J. Liou, Kuo-Yin Huang and Chin-Chang Cheng, “An Analytical Sub Threshold Current Model for Pocket-Implanted in MOSFETs”, IEEE Transactions on Electron Devices, Vol. 50, No. 6, pp. 1475-1479, 2003.
- A. Bilhah and M.K. Das, “Influence of Doping on the performance of GaAs/AlGaAs QWIP for Long Wavelength Applications”, Opto Electronics Reviews, Vol. 24, No. 1, pp. 1-14, 2016.
- Michael A. Demyanenko, Dmitry G. Esaev and A.I. Toropov, “AlGaAs/GaAs Quantum Well Infrared Photodetectors”, Intechopen, Vol. 71266, pp. 1-13, 2018.
- Ivan S. Panyaev, Dmitry G. Sannikov, Nataliya N. Dadoenkova and Yuliya S. Dadoenkova, “Three-Periodic 1D Photonic Crystals for Designing the Photonic Optical Devices Operating in the Infrared Regime”, Applied Optics, Vol. 60, pp. 1943-1952, 2021.
- W. Huaizhong, W. Zhanhua and B. Yang, “One-Dimensional Photonic Crystals: Fabrication, responsiveness and Emerging Applications in 3D Construction”, RSC Advances, Vol. 6, pp. 4505-4520, 2016.
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