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Framework for Parameter Extraction of Nonlinear Model for Mesfets and Implementation in Cad Tools


Affiliations
1 Department of Design, Gallium Arsenide Enabling Technology Centre, India
2 Department of Electronics and Communication Engineering, JNTU College of Engineering, India
     

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Extraction and implementation of nonlinear model in computer aided design (CAD) tools requires multiple steps. In this paper we present framework for nonlinear parameters extraction and implementation of model in CAD tools. Methodology selection at each step is based on the requirement according to the LN G7A in house fabricated MESFETs device and its application. To validate the model, simulated s- parameters from model are compared with measured data and percentage of error is below 10.3% from 500MHz to 20GHz. Measured and simulated drain to source current (Ids) is compared to validate the dc characteristics of the device. To evaluate the convergence of model in CAD tools, 5 to 5.5 GHz medium power amplifier is simulated which show that the model has not convergence issue during circuit simulation in Advanced Design System (ADS).

Keywords

Nonlinear Device Modeling, Nonlinear Parameter Extraction, Nonlinear Model, MESFETs, pHEMTs.
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  • Framework for Parameter Extraction of Nonlinear Model for Mesfets and Implementation in Cad Tools

Abstract Views: 135  |  PDF Views: 0

Authors

Mandleshwar Kumar Mishra
Department of Design, Gallium Arsenide Enabling Technology Centre, India
K. Anitha Sheela
Department of Electronics and Communication Engineering, JNTU College of Engineering, India

Abstract


Extraction and implementation of nonlinear model in computer aided design (CAD) tools requires multiple steps. In this paper we present framework for nonlinear parameters extraction and implementation of model in CAD tools. Methodology selection at each step is based on the requirement according to the LN G7A in house fabricated MESFETs device and its application. To validate the model, simulated s- parameters from model are compared with measured data and percentage of error is below 10.3% from 500MHz to 20GHz. Measured and simulated drain to source current (Ids) is compared to validate the dc characteristics of the device. To evaluate the convergence of model in CAD tools, 5 to 5.5 GHz medium power amplifier is simulated which show that the model has not convergence issue during circuit simulation in Advanced Design System (ADS).

Keywords


Nonlinear Device Modeling, Nonlinear Parameter Extraction, Nonlinear Model, MESFETs, pHEMTs.