ICTACT Journal on Microelectronics

Open Access Open Access  Restricted Access Subscription Access
Open Access Open Access Open Access  Restricted Access Restricted Access Subscription Access

Characterization and Mitigation of Electro-Static Bonding Failures in Microsensors


Affiliations
1 Systems Engineering Group, ISRO Satellite Centre, India
     

   Subscribe/Renew Journal


Electrostatic bonding between glass and silicon is carried out in micro sensor devices to achieve higher bond strength thus eliminating the requirement of adhesives. This can also be useful in providing hermiticity and results in reliable operation of the micro sensor devices. Practically the sensor performance is prone to long term drift mainly due to process associated with the assembly and packaging. Bonding is the one of the critical process in micro sensor and generally sensor stability is dependent on this process along with other packaging material and methodology. Bond strength is one of the critical parameters to find out the quality of bond and the same is quantified and compared for different conditions. This article details electrostatic bonding process, various parameters responsible for the reliable bonding, modelling and characterization along with simple methodology to achieve higher bond strength.

Keywords

Bonding, Micro-Sensor, Anodic, Electrostatic, Sensor, Bond Strength.
Subscription Login to verify subscription
User
Notifications
Font Size

  • Kamaljeet Singh and A.V. Nirmal, “Reliability Aspects in RF-MEMS Circuits for Space Applications”, Journal of Engineering and Technology Research, Vol. 4, No. 6, pp. 1-11, 2016.

  • W.H. Ko, J.T. Suminto and G.J. Yeh, “Bonding Techniques for Microsensors”, Proceedings of Conference on Micromachining and Micropackaging of Transducers, pp. 41-61, 1985

  • Mohamed Gad-el-Hak, “The MEMS Handbook”, 2nd Edition, CRC Press, 2002.

  • K. Petersen, P. Barth, J. Poydock, J. Brown, J. Mallon and J. Bryzek, “Silicon Fusion Bonding for Pressure Sensors”, Proceedings of IEEE Solid State Sensor and Actuator Workshop, pp. 144-147, 1998.

  • Hyun S. Kim, Robert H. Blick, D.M. Kim and C.B. Eom, “Bonding Silicon-on-Insulator to Glass Wafers for Integrated Bio-Electronic”, Applied Physics Letters, Vol. 85, No. 12, pp. 2370-2373, 2004.

  • R. Knechtel, G. Dahlmann and U. Schwarz, “Low and High Temperature Silicon Wafer Direct Bonding for Micromechanical Absolute Pressure Sensor”, Proceedings Electromechanical Society, pp. 205-207, 2005.

  • G. K. Ananthasuresh, K.J. Vinoy, S. Gopalakrishnan, K.N. Bhat and V.K. Aatre, “Micro and Smart Systems”, Wiley, 2010.


Abstract Views: 188

PDF Views: 1




  • Characterization and Mitigation of Electro-Static Bonding Failures in Microsensors

Abstract Views: 188  |  PDF Views: 1

Authors

Kamaljeet Singh
Systems Engineering Group, ISRO Satellite Centre, India
A. V. Nirmal
Systems Engineering Group, ISRO Satellite Centre, India
S. V. Sharma
Systems Engineering Group, ISRO Satellite Centre, India

Abstract


Electrostatic bonding between glass and silicon is carried out in micro sensor devices to achieve higher bond strength thus eliminating the requirement of adhesives. This can also be useful in providing hermiticity and results in reliable operation of the micro sensor devices. Practically the sensor performance is prone to long term drift mainly due to process associated with the assembly and packaging. Bonding is the one of the critical process in micro sensor and generally sensor stability is dependent on this process along with other packaging material and methodology. Bond strength is one of the critical parameters to find out the quality of bond and the same is quantified and compared for different conditions. This article details electrostatic bonding process, various parameters responsible for the reliable bonding, modelling and characterization along with simple methodology to achieve higher bond strength.

Keywords


Bonding, Micro-Sensor, Anodic, Electrostatic, Sensor, Bond Strength.

References