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Preparation and Characterization of Znse Thin Film for Photovoltaic Applications


 

ZnSe thin films are prepared by thermal evaporation of nanocrystalline ZnSe particles synthesized using solvothermal process. These are prepared on corning 1737 and ITO coated glass substrate under high vacuum. Structural properties investigated with X-ray diffraction show that the films are polycrystalline with zinc blende structure. Morphological and compositional analyses are performed using atomic force microscopy and scanning electron microscopy. Optical properties of the films are investigated using UV-vis-NIR measurement. The optical band gap is determined from the transmission data and is obtained as 2.75 eV. The electrical conductivity measurements are performed in both coplanar and sandwich geometry under high vacuum.

Keywords

Crystallites, X-ray Diffraction, Zinc Compounds, Semiconducting II-vI
Materials
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  • Preparation and Characterization of Znse Thin Film for Photovoltaic Applications

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Abstract


ZnSe thin films are prepared by thermal evaporation of nanocrystalline ZnSe particles synthesized using solvothermal process. These are prepared on corning 1737 and ITO coated glass substrate under high vacuum. Structural properties investigated with X-ray diffraction show that the films are polycrystalline with zinc blende structure. Morphological and compositional analyses are performed using atomic force microscopy and scanning electron microscopy. Optical properties of the films are investigated using UV-vis-NIR measurement. The optical band gap is determined from the transmission data and is obtained as 2.75 eV. The electrical conductivity measurements are performed in both coplanar and sandwich geometry under high vacuum.

Keywords


Crystallites, X-ray Diffraction, Zinc Compounds, Semiconducting II-vI
Materials