International Journal of Innovative Research and Development

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Calculation of the Electronic Properties of Gallium Arsenide (GaAs) Semiconductors for Photovoltaic Cells


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1 Department of Physics, Federal University of Technology, Owerri, Nigeria
 

Gallium Arsenide is one of the III – IV semiconductors with a direct energy band gap. The electronic properties of Gallium Arsenide (GaAs) was calculated using the Projector Augmented Wave (PAW) method. The lattice constant was found to be 5.75 Ǻ, the bulk modulus is 62.3 GPa, and the pressure derivative of the bulk modulus is 4.52. The computed values of the electronic properties of GaAs shows that it is a good material for making photovoltaic cells whose importance in renewable energy cannot be over emphasized.


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  • Calculation of the Electronic Properties of Gallium Arsenide (GaAs) Semiconductors for Photovoltaic Cells

Abstract Views: 201  |  PDF Views: 2

Authors

Ugwuagbo Kingsley
Department of Physics, Federal University of Technology, Owerri, Nigeria
C. A. Madu
Department of Physics, Federal University of Technology, Owerri, Nigeria
E. C. Mbamala
Department of Physics, Federal University of Technology, Owerri, Nigeria
N. I. Achuko
Department of Physics, Federal University of Technology, Owerri, Nigeria

Abstract


Gallium Arsenide is one of the III – IV semiconductors with a direct energy band gap. The electronic properties of Gallium Arsenide (GaAs) was calculated using the Projector Augmented Wave (PAW) method. The lattice constant was found to be 5.75 Ǻ, the bulk modulus is 62.3 GPa, and the pressure derivative of the bulk modulus is 4.52. The computed values of the electronic properties of GaAs shows that it is a good material for making photovoltaic cells whose importance in renewable energy cannot be over emphasized.