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Anandan, P.
- Simulation of Nanoscale Gate Length with Composite Channel In0.7Ga0.3As/InAs/In0.7Ga0.3As HEMT Using Sentaurus TCAD
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Authors
V. Balavignesh
1,
P. Anandan
2
Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN