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Authors
Affiliations
1 ECE, Sathyabama University, Chennai, IN
2 VLSI Dept, Sathyabama University, Chennai, IN
Source
Journal of Advances in Engineering Sciences, Vol 3, No 2 (2010), Pagination: 49-52
Abstract
The buried-gate GaAs MESFET with front illumination using turning ON channel current been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time 't' is equal to zero, the light through the optical fiber is turning 'ON' has been considered. The channel current has been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for microwave communication.