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Co-Authors
- A. Nath
- Priyanka
- J. K. Singh
- Shalini Singh
- Preety Jain
- Mohita Sardhana
- Satish Kumar Ranjan
- Manish Kumar Singh
- Durgesh Kumar Jaiswal
- Jay Prakash Verma
- J. N. Tiwari
- Sanjeev Kumar
- T. R. Ahlawat
- Nishtha Patel
- Vivek Jain
- Dheeraj Gupta
- Mohit Agrawal
- Sandhya Kattayat
- H. K. Sublania
- Jasgurpreet Singh
- K. P. Tewari
- P. A. Alvi
Journals
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z All
Kumar, Akhilesh
- High Level of Estrogen in Male Oral Cancer Patients and Consumption of Smokeless Tobacco
Abstract Views :712 |
PDF Views:242
Authors
A. Nath
1,
Priyanka
1,
J. K. Singh
1,
Shalini Singh
1,
Preety Jain
1,
Mohita Sardhana
2,
Akhilesh Kumar
1,
Satish Kumar Ranjan
1,
Manish Kumar Singh
1
Affiliations
1 Mahavir Cancer Sansthan and Research Centre, Patna, Bihar, IN
2 Dept. of Zoology, M. M. College, Patna University, Patna, Bihar, IN
1 Mahavir Cancer Sansthan and Research Centre, Patna, Bihar, IN
2 Dept. of Zoology, M. M. College, Patna University, Patna, Bihar, IN
Source
Journal of Ecophysiology and Occupational Health, Vol 14, No 3-4 (2014), Pagination: 159-164Abstract
Oral cancer is the most common form of cancer and cancer-related deaths among Indian males. 70-75% of these cases are due to chewing tobacco. Estrogen and testosterone both are an important hormone for male and female. Estrogen has an important role in the development of breast cancer, ovarian cancer etc. There are very few studies available which describe the increased oral cancer incidence and level of estrogen in male oral cancer patients and use of smokeless tobacco consumption among the same type of cancer patients. Therefore, the present study has been aimed to find out the prevalence of oral cancer due to consumption of smokeless tobacco, sub-site distribution and level of estrogen in the oral cancer patients in Bihar. In the present study 126 patients suffering from oral cancer were selected randomly. The background data obtained were categorized into sex-wise as well as age-wise oral cancer incidence, carcinoma site, frequency of oral cancer and the type of tobacco addiction among the surveyed oral cancer patients. Estrogen level in male oral cancer patients was assessed by ELISA-kit method. Addiction of khaini among all of the smoke and smokeless tobacco consuming persons in Bihar was found higher. Prevalence of oral cancer was four times higher in male patients than the female and the level of estrogen hormone in male oral cancer patients were found elevated. In conclusion, high oral cancer incidence has been observed among people of Bihar. Most popular form of smokeless tobacco is khaini mainly used by illiterate people. Elevated level of estrogen hormone in male oral cancer patients may be associated with the increased incidence of oral cancer among people of Bihar. It may further provide some evidence to understand the whole mechanism of oral cancer.Keywords
Oral Cancer, Estrogen, Smokeless Tobacco, ELISA.Full Text
- Soil Health and Climate Change
Abstract Views :219 |
PDF Views:68
Authors
Affiliations
1 Institute of Environment and Sustainable Development, Banaras Hindu University, Varanasi 221 005, IN
1 Institute of Environment and Sustainable Development, Banaras Hindu University, Varanasi 221 005, IN
Source
Current Science, Vol 112, No 06 (2017), Pagination: 1280-1281Abstract
The book under review covers various aspects of soil health and climate change. Soil health is strongly linked with human health and environment, but the relationship between soil health, food quality and human health is less understood. A great variety of microorganisms of different sizes, behaviour and physiology are found in healthy soil. The health of the soil is highly influenced by soil degradation and climate change.Full Text
References
- Reeve, J. R. et al., Adv. Agron., 2016; doi: 10.1016/bs.agron.2015.12.003.
- Ferris, H. and Tuomisto, H., Soil Biol. Biochem., 2015, 85, 101–109.
- Kumar, S., Pandey, P. and Maheshwari, D. K., Eur. J. Soil Biol., 2009, 45, 334–340.
- Hamilton, C. E., Bever, J. D., Labbe, J., Yang, X. and Yin, H., Agric. Ecosys. Environ., 2016, 216, 304–308.
- Heterosis for Yield and its Components in Okra [Abelmoschus esculentus (L.) Moench]
Abstract Views :210 |
PDF Views:1
Authors
Affiliations
1 Department of Vegetable Science, ASPEE College of Horticulture and Forestry, Navsari Agricultural University, Navsari (Gujarat), IN
2 Department of Fruit Science, ASPEE College of Horticulture and Forestry, Navsari Agricultural University, Navsari (Gujarat), IN
1 Department of Vegetable Science, ASPEE College of Horticulture and Forestry, Navsari Agricultural University, Navsari (Gujarat), IN
2 Department of Fruit Science, ASPEE College of Horticulture and Forestry, Navsari Agricultural University, Navsari (Gujarat), IN
Source
The Asian Journal of Horticulture, Vol 10, No 2 (2015), Pagination: 201-206Abstract
The present investigation was carried out to study heterosis for various horticultural traits of okra in late Kharif- 2013 and summer, 2014 by involving five diverse parents in a diallel mating including reciprocals. The analysis of variance reflected considerable variability for yield and other component traits. VRO-6 was excellent over other parents in per se performance for majority of traits under investigation except average fruit weight, fruit stalk length and ascorbic acid. The cross-combination VRO-6 x GJO-3 was the only F1 exhibiting significant heterobeltiosis as well as standard heterosis for yield per plant. Whereas hybrids AA x AOL-12-52, AA x GJO-3 and VRO-6 x AA also displayed significant heterosis over better parent for this character. The cross-combination VRO-6 x GJO-3 also recorded significant and desirable heterotic gain over standard check for other traits like first flowering node, days to first flowering, number of branches per plant and average fruit weight.
Keywords
Heterosis, Okra, Per se Performance, Diallel, Horticultural Traits.
- Experimental Investigation of SS-304 by using Orbital Welding with A-TIG Process
Abstract Views :131 |
PDF Views:0
Authors
Affiliations
1 Department of Mechanical Engineering, Thapar University, Patiala – 147004, Punjab, IN
2 Department of Welding, DEE piping systems, Tatarpur – 121102, Haryana,, IN
1 Department of Mechanical Engineering, Thapar University, Patiala – 147004, Punjab, IN
2 Department of Welding, DEE piping systems, Tatarpur – 121102, Haryana,, IN
Source
Indian Journal of Science and Technology, Vol 10, No 31 (2017), Pagination:Abstract
Tungsten Inert Gas (TIG) welding is the mostly used fabrication technique used for joining stainless steel pipe in industry. By this process limited Depth of Penetration (DOP) can be achieved in a single pass. To overcome this problem, the current, speed and flow rate needs to be significantly changed and it will effect productivity. Therefore Activated TIG welding (A-TIG) is explored in the present study. The effect of hybrid mixture is evaluated in terms of DOP on AISI 304 by an automatic orbital welding setup. Hence a mathematical modelling is being done DOP by varying thickness, current, travel speed, and flow rate. A Leica microscope is used to capture the image of microstructure of weld bead. The result shows that a significant increase in DOP and width to penetration ratio by increasing the current for higher thickness after using of activated flux.Keywords
Activated Flux, Current, Depth of penetration (DOP), Lorentz Force, Marangoni Effect, Shielding Gas, Stainless Steels, TIG weldingFull Text
- Study of band structures of GaAs and InAs grown on different substrates
Abstract Views :77 |
PDF Views:0
Authors
Akhilesh Kumar
1,
Sandhya Kattayat
2,
H. K. Sublania
3,
Jasgurpreet Singh
4,
K. P. Tewari
1,
P. A. Alvi
5
Affiliations
1 Department of Physics, Agra College, Dr. B. R. Ambedkar University, Agra 282001, UP, India., IN
2 Higher Colleges of Technology, PO Box 25026, Abu Dhabi, United Arab Emirates., AE
3 Department of Physics, Government College, Kota- 324001, Rajasthan. India., IN
4 University Centre for Research & Development, Department of Mechanical Engineering, Chandigarh University, Gharuan, Punjab., IN
5 Department of Physics, Banasthali Vidyapith, Banasthali-304022, Rajasthan, India., IN
1 Department of Physics, Agra College, Dr. B. R. Ambedkar University, Agra 282001, UP, India., IN
2 Higher Colleges of Technology, PO Box 25026, Abu Dhabi, United Arab Emirates., AE
3 Department of Physics, Government College, Kota- 324001, Rajasthan. India., IN
4 University Centre for Research & Development, Department of Mechanical Engineering, Chandigarh University, Gharuan, Punjab., IN
5 Department of Physics, Banasthali Vidyapith, Banasthali-304022, Rajasthan, India., IN
Source
Journal of Mines, Metals and Fuels, Vol 71, No 4 (2023), Pagination: 538-541Abstract
In the early studies, thorough calculations for the band structures of binary and ternary semiconductor compounds have been performed. But in those studies the role of substrate, on which the studied compound is grown, has not been accounted. In this paper, the calculations for the band structures of technologically important binary semiconductors i.e. GaAs and InAs considering the effect of substrate have been performed and the results have been analysed successfully. In results, it has been shown that considering the lattice matched substrate with the grown semiconductor layers is very important for better device performance.Keywords
GaAs, InAs, Band Structures, K.P Theory, Substrate.References
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- Alvi, P. A., Sapna Gupta, Meha Sharma, Swati Jha, and F. Rahman. (2011): “Computational modelling of novel InN/Al 0.3 0In 0.70 N multilayer nano-heterostructure.” Physica E: Low-dimensional systems and Nanostructures44, no. 1, 49-55.
- Boyer-Richard, S., Faycal Raouafi, Alexandre Bondi, Laurent Pedesseau, Claudine Katan, J-M. Jancu, and Jacky Even. (2011): “30-band k• p method for quantum semiconductor heterostructures.” Applied Physics Letters98, no. 25: 251913.
- Ahrenkiel, Richard K., and Mark S. Lundstrom (1993): Semiconductors and semimetals. Academic Press.
- Marconcini, Paolo, and Massimo Macucci. (2011): “The k• p method and its application to graphene, carbon nanotubes and graphene nanoribbons: The Dirac equation.” La Rivista del Nuovo Cimento34 no.8: 489-584.
- Peter, Y. U., and Manuel Cardona (2010): Fundamentals of semiconductors: physics and materials properties. Springer Science & Business Media.
- Alvi, P. A., Sapna Gupta, M. J. Siddiqui, G. Sharma, and S. Dalela. (2010): “Modelling and simulation of GaN/ Al0.3 Ga0.7 N new multilayer nano-heterostructure.” Physica B: Condensed Matter405, no. 10: 2431-2435.
- Gupta, Sapna, F. Rahman, M. J. Siddiqui, and P. A. Alvi. (2013): “Strain profile in nitride based multilayer nano-heterostructures.” Physica B: Condensed Matter411, 40-47.
- Vurgaftman, I., J. áR Meyer, and L. áR Ram-Mohan. (2001): “Band parameters for III–V compound semiconductors and their alloys.” Journal of applied physics89, no. 11: 5815-5875.
- Samajdar, D. P., T. D. Das, and S. Dhar. (2016): “Calculation of Valence Band Structure and Band Dispersion in Indium containing III–V Bismides by kÅ” p method.” Computational Materials Science111: 497-502.
- Haider, Syed Firoz, Upendra Kumar, Sandhya Kattayat, Smitha Josey, M. Ayaz Ahmad, Saral K. Gupta, Rakesh Sharma, Mohammed Ezzeldien, and P. A. Alvi. (2021): “Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure.” Results in Optics5, 100138.
- Li, Xin, Yu Zhao, Qihua Wu, Yan Teng, Xiujun Hao, and Yong Huang.(2018): “Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition.” Journal of Crystal Growth 502, 71-75.
- Khan, M. Imran, P. M. Z. Hasan, Ekram Y. Danish, Mohammad Aslam, Sandhya Kattayat, Shalendra Kumar, Saurabh Dalela, M. Ayaz Ahmad, and P. A. Alvi. (2021): “Fine tunability of optical gain characteristics of InGaAs/GaAsSb/InAlAs nano-heterostructure under combined effect of field and temperature.” Superlattices and Microstructures156, 106982.
- Bhardwaj, Garima, Nisha Yadav, S. G. Anjum, M. J. Siddiqui, and P. A. Alvi. (2017): “Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/ GaAsSb nano-scale heterostructure.” Optik146, 8-16.