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Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method


Affiliations
1 Department of Physics, Mugla Sitki Kocman University, 48170 Mugla, Turkey
2 Department of Energy Engineering, Karamanoglu Mehmetbey University, 70100 Karaman, Turkey
3 Department of Physics, Batman University, 72000 Batman, Turkey
 

Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80-320K while the current-voltage (I-V) characteristics of the structure were examined in the study. Ideality factor (n) and barrier height (φb) values found in the experiment ranged from 3.13 and 0.616 eV (320 K) to 11.56 and 0.147 eV (80K). Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.
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  • Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

Abstract Views: 60  |  PDF Views: 0

Authors

Fadan Ozden
Department of Physics, Mugla Sitki Kocman University, 48170 Mugla, Turkey
Cem Tozlu
Department of Energy Engineering, Karamanoglu Mehmetbey University, 70100 Karaman, Turkey
Osman Pakma
Department of Physics, Batman University, 72000 Batman, Turkey

Abstract


Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80-320K while the current-voltage (I-V) characteristics of the structure were examined in the study. Ideality factor (n) and barrier height (φb) values found in the experiment ranged from 3.13 and 0.616 eV (320 K) to 11.56 and 0.147 eV (80K). Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.