Journal of Scientific and Technical Research (Sharda University, Noida)

D. Ghosal ¹, K. K. Ghosh ¹

Affiliations
1 SRC Institute of Engineering and Management, Salt Lake, Kolkata, IN

Abstract

Constant downscaling of gate oxide thickness in present state of art technology in MOS has motivated interest in the eventual tunneling that seriously limits and warns the faithful performance of MOS. In the present paper, with help of existing tunneling models of two very important gate leakage currents like Fowler-Nordheim and Direct tunnel such leakage are successfully simulated by Minimos-NT simulator under different conditions of gate and drain biases and verified the results with the experimental results.

Keywords

Saponification, Comparative, Physio Chemical Parameters, Trace Metals, Heavy Metals, Oil Samples.

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Soumik Chatterjee ¹, Srijita Panda ¹, K. K. Ghosh ¹

Affiliations
1 Institute of Engineering and Management, Sector V, Saltlake, Kolkata-700091, IN

Abstract

Quantum interference by electronic waves very significantly influences the quantum transport and hence the electronic properties in nanomaterials. Graphene, in which the Dirac fermions play an important role in transport, is studied through one such transport parameter e.g. conductance. Graphene quantum dot of two different shapes and sizes are considered for the study. The conductance is seen to oscillate with electron energy. Size of the ballistic leads also affects the size of the oscillations.

Keywords

Graphene, Dirac Fermions, Quantum Dot, Tight Binding Model, Ballistic Conductance.

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