Journal of Electromagnetic Analysis and Applications

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EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light


Affiliations
1 Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
 

It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

Keywords

Hot Electrons, The Microwave Field, p-n-Junction, Light, Photocurrent, Generation and Recombination Currents.
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  • EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light

Abstract Views: 591  |  PDF Views: 1

Authors

Gafur Gulyamov
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Muhammadjon Gulomkodirovich Dadamirzaev
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Nosir Yusupjanovich Sharibayev
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan
Ne'matjon Zokirov
Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan

Abstract


It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

Keywords


Hot Electrons, The Microwave Field, p-n-Junction, Light, Photocurrent, Generation and Recombination Currents.