Computational Study of Nanoscale Si-CMOS Transport Phenomena for a Promising Source of Renewable Energy

Recent Si-CMOS transport models in Nanoscale paradigm have been analyzed and compared in this work. Modeling scenarios for each of these models are presents and compared with the others. Modeling of some nanoscale parameters such asmobility (μ), temperature (T), injection velocity (V_inj), backscattering coefficient (R_B), and effective electric field (E_eff) are presented in some or all of these models forshort channel effect (SCE) condition.A new proposed model for carrier transport low field mobility is introduced and compared with these models based on elastic and inelastic scattering mechanisms and channel potential profile (V_x). Observations and recommendations results taken from the evaluated comparison are: determining the simultaneous injection and temperature dependence of the sum of the majority and minority carrier mobilitiesin silicon wafers is an important issue in modeling mobility. Insertion of partial mono-layers of oxygen during silicon epitaxial of the channel layer is the best in modeling the effective electric field effect in nanoscale CMOS transport models. Furthermore, the proposed model conducts minimum computational time when compared with BSIM6 model and the other voted models with more than 46.23% saving of BSIM6 running time while BSIM6 model got the second low computational cost model. This will pave the road into efficient and modified modeling approach that optimize CMOS functionality for scales lower than 22nm in addition to leakage current density mitigation.