Invertis Journals of Renewable Energy

Open Access Open Access  Restricted Access Subscription Access

Study of Opto-Electronic Properties of Copper Sulphide Thin Film Grown by Chemical Bath Deposition Technique for Electronic Device Application


Affiliations
1 Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), India
2 Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), India
 

Cu2S Thin Film have been synthesized by simple and economic solution growth technique onto silica glass substrate with bath temperature at 40°C for an hour. Optical, properties of the prepared Thin Films were investigated by UV-Visible Spectrophotometer and Electrical properties of the prepared Thin Films were investigated by I-V Measurement System. The optical band gap was calculated by plotting Energy (hν) versus (αhν)2 and it was found to be 2.315 eV which is in very good agreement with the reported values. The semiconducting nature of the film has been confirmed from I-V Measurement curve which has shown ohmic nature in dark condition. Surface morphology have been studied by Scanning Electron Microscopy which revealed entire substrate surface was covered with uniform deposition which contains irregular shaped grains are uniformly distributed.

Keywords

Cu2S Thin Film, Solution Growth Technique, Optical Band Gap.
User
Notifications
Font Size

Abstract Views: 160

PDF Views: 0




  • Study of Opto-Electronic Properties of Copper Sulphide Thin Film Grown by Chemical Bath Deposition Technique for Electronic Device Application

Abstract Views: 160  |  PDF Views: 0

Authors

Nanasaheb P. Huse
Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), India
Deepak S. Upadhyea
Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), India
Avinash S. Dive
Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), India
Rampahal Sharma
Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad (431004), India

Abstract


Cu2S Thin Film have been synthesized by simple and economic solution growth technique onto silica glass substrate with bath temperature at 40°C for an hour. Optical, properties of the prepared Thin Films were investigated by UV-Visible Spectrophotometer and Electrical properties of the prepared Thin Films were investigated by I-V Measurement System. The optical band gap was calculated by plotting Energy (hν) versus (αhν)2 and it was found to be 2.315 eV which is in very good agreement with the reported values. The semiconducting nature of the film has been confirmed from I-V Measurement curve which has shown ohmic nature in dark condition. Surface morphology have been studied by Scanning Electron Microscopy which revealed entire substrate surface was covered with uniform deposition which contains irregular shaped grains are uniformly distributed.

Keywords


Cu2S Thin Film, Solution Growth Technique, Optical Band Gap.