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Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism


Affiliations
1 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
 

The electrochemical deposition of zinc on single-crystal n-type GaN(0001) from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized bymeans of scanning electron microscopy, X-ray diffraction, and energydispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of -1.12V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ∼0.132mAcm-2 was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10mM ZnSO4 + 0.5M Na2SO4 + 0.5M H3BO3 (pH = 4).
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  • Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism

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Authors

Fei Peng
Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
Shuang-Jiao Qin
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Yu Zhao
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Ge-Bo Pan
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Abstract


The electrochemical deposition of zinc on single-crystal n-type GaN(0001) from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized bymeans of scanning electron microscopy, X-ray diffraction, and energydispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of -1.12V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ∼0.132mAcm-2 was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10mM ZnSO4 + 0.5M Na2SO4 + 0.5M H3BO3 (pH = 4).